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PDF K7N641845M Data sheet ( Hoja de datos )

Número de pieza K7N641845M
Descripción 2Mx36 & 4Mx18 Pipelined NtRAM
Fabricantes Samsung semiconductor 
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No Preview Available ! K7N641845M Hoja de datos, Descripción, Manual

K7N643645M
K7N641845M
wwPwr.DealtiamSheient4aUr.cyom
2Mx36 & 4Mx18 Pipelined NtRAMTM
Document Title
2Mx36 & 4Mx18-Bit Pipelined NtRAMTM
Revision History
Rev. No.
History
Draft Date
0.0 1. Initial document.
Sep. 30. 2002
0.1 1. Delete the speed bins (FT : 7.5ns, 8.5ns / PP : 200MHz)
Oct. 8. 2002
0.2 1. Change to the New JTAG scan order.
Feb. 25, 2003
0.3 1. Add the comment about Vdd/Vddq wide by note on page 13.
Mar. 10, 2003
0.4 1. Delete the 119 BGA package type.
Aug. 18, 2004
0.5 1. Delete the 1.8V and 3.3V Vdd voltage level
Oct. 20, 2004
( Change the part number to K7N6436(18)45M from K7N6436(18)31M )
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
- 1 - Oct. 2004
Rev 0.5

1 page




K7N641845M pdf
K7N643645M
K7N641845M
PIN CONFIGURATION(TOP VIEW)
wwPwr.DealtiamSheient4aUr.cyom
2Mx36 & 4Mx18 Pipelined NtRAMTM
N.C.
N.C.
N.C.
VDDQ
VSSQ
N.C.
N.C.
DQb8
DQb7
VSSQ
VDDQ
DQb6
DQb5
VDD
VDD
VDD
VSS
DQb4
DQb3
VDDQ
VSSQ
DQb2
DQb1
DQb0
N.C.
VSSQ
VDDQ
N.C.
N.C.
N.C.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
K7N641845M(4Mx18)
80 A10
79 N.C.
78 N.C.
77 VDDQ
76 VSSQ
75 N.C.
74 DQa0
73 DQa1
72 DQa2
71 VSSQ
70 VDDQ
69 DQa3
68 DQa4
67 VSS
66 VDD
65 VDD
64 ZZ
63 DQa5
62 DQa6
61 VDDQ
60 VSSQ
59 DQa7
58 DQa8
57 N.C.
56 N.C.
55 VSSQ
54 VDDQ
53 N.C.
52 N.C.
51 N.C.
PIN NAME
SYMBOL
PIN NAME
A0 - A21
Address Inputs
ADV
Address Advance/Load
WE Read/Write Control Input
CLK Clock
CKE
Clock Enable
CS1 Chip Select
CS2 Chip Select
CS2 Chip Select
BWx(x=a,b) Byte Write Inputs
OE Output Enable
ZZ Power Sleep Mode
LBO
Burst Mode Control
TQFP PIN NO.
32,33,34,35,36,37,42,
43,44,45,46,47,48,49,
50,80,81,82,83,84,99,
100
85
88
89
87
98
97
92
93,94
86
64
31
SYMBOL
VDD
VSS
N.C.
DQa0~a8
DQb0~b8
VDDQ
VSSQ
PIN NAME
Power Supply(2.5V)
Ground
TQFP PIN NO.
14,15,16,41,65,66,91
17,40,67,90
No Connect
1,2,3,6,7,25,28,29,30,
38,39,51,52,53,56,57,
75,78,79,95,96
Data Inputs/Outputs 58,59,62,63,68,69,72,73,74
Data Inputs/Outputs 8,9,12,13,18,19,22,23,24
Output Power Supply 4,11,20,27,54,61,70,77
(2.5V)
Output Ground
5,10,21,26,55,60,71,76
NOTE : A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
- 5 - Oct. 2004
Rev 0.5

5 Page





K7N641845M arduino
K7N643645M
K7N641845M
wwPwr.DealtiamSheient4aUr.cyom
2Mx36 & 4Mx18 Pipelined NtRAMTM
ASYNCHRONOUS TRUTH TABLE
OPERATION
Sleep Mode
Read
Write
Deselected
ZZ OE I/O STATUS
HX
High-Z
LL
DQ
LH
High-Z
L X Din, High-Z
LX
High-Z
Notes
1. X means "Dont Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 3.6
V
Voltage on Any Other Pin Relative to VSS
VIN
-0.3 to VDD+0.3
V
Power Dissipation
PD 1.6 W
Storage Temperature
Operating Temperature
Storage Temperature Range Under Bias
TSTG
TOPR
TBIAS
-65 to 150
0 to 70
-10 to 85
°C
°C
°C
*Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING CONDITIONS(0°C TA 70°C)
PARAMETER
Supply Voltage
Ground
SYMBOL
VDD
VDDQ
VSS
MIN
2.375
2.375
0
*Note : VDD and VDDQ must be supplied with identical vlotage levels.
CAPACITANCE*(TA=25°C, f=1MHz)
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
CIN
COUT
*Note : Sampled not 100% tested.
TEST CONDITION
VIN=0V
VOUT=0V
Typ.
2.5
2.5
0
TYP
-
-
MAX
2.625
2.625
0
MAX
TBD
TBD
UNIT
V
V
V
UNIT
pF
pF
- 11 -
Oct. 2004
Rev 0.5

11 Page







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