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PDF TC4421A Data sheet ( Hoja de datos )
| Número de pieza | TC4421A | |
| Descripción | 9A High-Speed MOSFET Drivers | |
| Fabricantes | Microchip Technology | |
| Logotipo |  |
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TC4421A/TC4422A
9A High-Speed MOSFET Drivers
Features
• High Peak Output Current: 10A (typ.)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Continuous Output Current: 2A (max.)
• Matched Fast Rise and Fall Times:
- 15 ns with 4,700 pF Load
- 135 ns with 47,000 pF Load
• Matched Short Propagation Delays: 42 ns (typ.)
• Low Supply Current:
- With Logic ‘1’ Input – 130 µA (typ.)
- With Logic ‘0’ Input – 33 µA (typ.)
• Low Output Impedance: 1.2Ω (typ.)
• Latch-Up Protected: Will Withstand 1.5A Output
Reverse Current
• Input Will Withstand Negative Inputs Up To 5V
• Pin-Compatible with the TC4420/TC4429
and TC4421/TC4422 MOSFET Drivers
• Space-Saving, Thermally-Enhanced, 8-Pin DFN
Package
Applications
• Line Drivers for Extra Heavily-Loaded Lines
• Pulse Generators
• Driving the Largest MOSFETs and IGBTs
• Local Power ON/OFF Switch
• Motor and Solenoid Driver
• LF Initiator
General Description
The TC4421A/TC4422A are improved versions of the
earlier TC4421/TC4422 family of single-output
MOSFET drivers. These devices are high-current
buffer/drivers capable of driving large MOSFETs and
Insulated Gate Bipolar Transistors (IGBTs). The
TC4421A/TC4422A have matched output rise and fall
times, as well as matched leading and falling-edge
propagation delay times. The TC4421A/TC4422A
devices also have very low cross-conduction current,
reducing the overall power dissipation of the device.
These devices are essentially immune to any form of
upset, except direct overvoltage or over-dissipation.
They cannot be latched under any conditions within
their power and voltage ratings. These parts are not
subject to damage or improper operation when up to
5V of ground bounce is present on their ground
terminals. They can accept, without damage or logic
upset, more than 1A inductive current of either polarity
being forced back into their outputs. In addition, all
terminals are fully protected against up to 4 kV of
electrostatic discharge.
The TC4421A/TC4422A inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300 mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slowly rising or falling waveforms.
With both surface-mount and pin-through-hole
packages, in addition to a wide operating temperature
range, the TC4421A/TC4422A family of 9A MOSFET
drivers fit into most any application where high gate/line
capacitance drive is required.
Package Types(1)
8-Pin TC4421A TC4422A
PDIP/SOIC
VDD 1
8
INPUT 2 TC4421A 7
NC 3 TC4422A 6
GND 4
5
VDD
OUTPUT
OUTPUT
GND
VDD
OUTPUT
OUTPUT
GND
8-Pin DFN(2) TC4421A TC4422A
VDD 1
INPUT 2
NC 3
GND 4
8 VDD
VDD
TC4421A 7 OUTPUT OUTPUT
TC4422A 6 OUTPUT OUTPUT
5 GND
GND
5-Pin TO-220
TC4421A
TC4422A
Tab is
Common
to VDD
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is electrically isolated.
© 2005 Microchip Technology Inc.
DS21946A-page 1
1 page  
TC4421A/TC4422A
2.0 TYPICAL PERFORMANCE CURVES
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Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
180
160
140
22,000 pF
120
100
80
60 10,000 pF
40
20 1,000 pF 100 pF
0
4 6 8 10 12 14 16 18
Supply Voltage (V)
FIGURE 2-1:
Voltage.
Rise Time vs. Supply
300
250
200
150
100
50
0
100
FIGURE 2-4:
Load.
5V
10V
15V
1000
10000
Capacitive Load (pF)
100000
Fall Time vs. Capacitive
300
250
200
150
100
50
0
100
FIGURE 2-2:
Load.
5V
10V
15V
1000
10000
Capacitive Load (pF)
100000
Rise Time vs. Capacitive
55
VDD = 15V
50
45
40
tRISE
35
30 tFALL
25
20
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
FIGURE 2-5:
Temperature.
Rise and Fall Times vs.
180
160
140
120
22,000 pF
100
80
60 10,000 pF
40
20 1,000 pF 100 pF
0
4 6 8 10 12 14 16 18
Supply Voltage (V)
FIGURE 2-3:
Voltage.
Fall Time vs. Supply
11E0--77
11E0--88
11E0--99
4
6
FIGURE 2-6:
Voltage.
8 10 12 14 16 18
Supply Voltage (V)
Crossover Energy vs Supply
© 2005 Microchip Technology Inc.
DS21946A-page 5
5 Page 
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
5-Lead TO-220
XXXXXXXXX
XXXXXXXXX
YYWWNNN
TC4421A/TC4422A
www.DataSheet4U.com
Example:
TC4421A
XXXVAXTXX^eX^3XX
0514256
8-Lead DFN
XXXXXXX
XXXXXXX
XXYYWW
NNN
8-Lead PDIP (300 mil)
XXXXXXXX
XXXXXNNN
YYWW
8-Lead SOIC (150 mil)
XXXXXXXX
XXXXYYWW
NNN
Example:
TC4421A
VMF^e3
0514
256
Example:
TC4421A
PA e^3 256
0514
Example:
TC4421A
SN e3 0514
256
Legend:
XX...X
Y
YY
WW
NNN
e3
*
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2005 Microchip Technology Inc.
DS21946A-page 11
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet TC4421A.PDF ] | |
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