DataSheet.es    


PDF K6F8016R6B Data sheet ( Hoja de datos )

Número de pieza K6F8016R6B
Descripción 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



Hay una vista previa y un enlace de descarga de K6F8016R6B (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! K6F8016R6B Hoja de datos, Descripción, Manual

K6F8016R6B Family
CMwwOwS.DaStaSRheAet4MU.com
Document Title
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
1.0 Finalize
Draft Date
July 25, 2001
Remark
Preliminary
October 24, 2001 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
October 2001

1 page




K6F8016R6B pdf
K6F8016R6B Family
CMwwOwS.DaStaSRheAet4MU.com
AC OPERATING CONDITIONS
VTM3)
TEST CONDITIONS(Test Load and Input/Output Reference)
Input pulse level: 0.2 to Vcc-0.2V
R12)
Input rising and falling time: 5ns
Input and output reference voltage: 0.9V
Output load(see right): CL=100pF+1TTL
CL1)
R22)
CL=30pF+1TTL
1. Including scope and jig capacitance
2. R1=3070, R2=3150
3. VTM =1.8V
AC CHARACTERISTICS(Vcc=1.65~2.2V, Industrial product: TA=-40 to 85°C)
Parameter List
Read
Write
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
UB, LB Access Time
Chip Select to Low-Z Output
UB, LB Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
UB, LB Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
UB, LB Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
Symbol
tRC
tAA
tCO
tOE
tBA
tLZ
tBLZ
tOLZ
tHZ
tBHZ
tOHZ
tOH
tWC
tCW
tAS
tAW
tBW
tWP
tWR
tWHZ
tDW
tDH
tOW
Speed Bins
70ns
85ns
Min Max Min Max
70 - 85 -
- 70 - 85
- 70 - 85
- 35 - 40
- 70 - 85
10 - 10 -
10 - 10 -
5-5-
0 25 0 25
0 25 0 25
0 25 0 25
10 - 10 -
70 - 85 -
60 - 70 -
0-0-
60 - 70 -
60 - 70 -
50 - 60 -
0-0-
0 20 0 25
30 - 35 -
0-0-
5-5-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
VDR
IDR
tSDR
tRDR
CS1Vcc-0.2V1)
Vcc=1.2V, CS1Vcc-0.2V1)
See data retention waveform
1. 1) CS1Vcc-0.2V, CS2Vcc-0.2V(CS1 controlled) or
2) 0CS20.2V(CS2 controlled)
2. Typical value are measured at TA=25°C and not 100% tested.
Min Typ2) Max Unit
1.0 - 2.2 V
- 0.5 6 µA
0-
tRC -
-
ns
-
5 Revision 1.0
October 2001

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet K6F8016R6B.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
K6F8016R6B512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAMSamsung semiconductor
Samsung semiconductor
K6F8016R6D512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAMSamsung semiconductor
Samsung semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar