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PDF K6F2008T2E Data sheet ( Hoja de datos )
| Número de pieza | K6F2008T2E | |
| Descripción | 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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K6F2008T2E Family
Preliminary
CMwOwwS.DaStaSRheAetM4U.com
Document Title
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
Draft Date
June 16 , 2003
Remark
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 0.0
June 2003
1 page  
K6F2008T2E Family
Preliminary
CMwOwwS.DaStaSRheAetM4U.com
AC OPERATING CONDITIONS
TEST CONDITIONS (Test Load and Test Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load (See right): CL=100pF+1TTL
CL=30pF+1TTL
VTM3)
R12)
CL1)
R23)
1. Including scope and jig capacitance
2. R1=3070Ω, R2=3150Ω
3. VTM =2.8V
AC CHARACTERISTICS(Vcc=2.7~3.6V, TA=-40 to 85°C)
Parameter List
Symbol
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Read Chip Select to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width
Write
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
1. The parameter is measured with 30pF test load.
tRC
tAA
tCO
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
tWC
tCW
tAS
tAW
tWP
tWR
tWHZ
tDW
tDH
tOW
Speed Bins
55ns1)
70ns
Min Max Min Max
55 - 70 -
- 55 - 70
- 55 - 70
- 25 - 35
10 - 10 -
5-5-
0 20 0 25
0 20 0 25
10 - 10 -
55 - 70 -
45 - 60 -
0-0-
45 - 60 -
40 - 50 -
0-0-
0 20 0 20
25 - 30 -
0-0-
5-5-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
VDR
IDR
tSDR
tRDR
CS1≥Vcc-0.2V1)
Vcc=1.5V, CS1≥Vcc-0.2V1)
See data retention waveform
1. CS1≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or CS2≤0.2V(CS2 controlled).
2. Typical values are measured at TA=25°C and not 100% tested.
Min Typ Max Unit
1.5 - 3.6 V
-
0.22)
2
µA
0-
tRC -
-
ns
-
5 Revision 0.0
June 2003
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet K6F2008T2E.PDF ] | |
Hoja de datos destacado
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