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PDF K1S2816BCM Data sheet ( Hoja de datos )
| Número de pieza | K1S2816BCM | |
| Descripción | 8Mx16 bit Page Mode Uni-Transistor Random Access Memory | |
| Fabricantes | Samsung semiconductor | |
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K1S2816BCM
Document Title
8Mx16 bit Page Mode Uni-Transistor Random Access Memory
www.DataSheet4U.com
UtRAM
Revision History
Revision No. History
0.0 Initial Draft
- Design Target
Draft Date
April 12, 2004
0.1 Revised
July 12, 2004
- Updated "TIMING WAVEFORM OF WRITE CYCLE(1) (WE Con-
trolled)" in page 8 and added tWHP(WE High Pulse Width) parameter
as Min.5ns
- Added comment on standby current(ISB1) measure condition as
"Standby mode is supposed to be set up after at least one active
operation after power up. ISB1 is measured after 60ms from the time
when standby mode is set up."
- Changed ISB1 value(< 85°C) from 200µA into 250µA
1.0 Finalize
- Changed tOH from 5ns to 3ns
April 06, 2005
Remark
Preliminary
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 1.0
April 2005
1 page  
K1S2816BCM
www.DataSheet4U.com
UtRAM
PRODUCT LIST
Part Name
K1S2816BCM
Industrial Temperature Product(-40~85°C)
Function
70ns, 1.8V
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width ≤20ns.
3. Undershoot: -1.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
VIH
VIL
Min
1.7
0
0.8 x VCC
-0.23)
Typ
1.85
0
-
-
Max
2.0
0
Vcc+0.22)
0.4
Unit
V
V
V
V
CAPACITANCE1)(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Input leakage current
ILI VIN=Vss to Vcc
Output leakage current
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH,
VIO=Vss to Vcc
Average operating current ICC2 Cycle time=tRC+3tPC, IIO=0mA, 100% duty, CS1=VIL,
CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIH or VIL
Output low voltage
VOL IOL=0.1mA
Output high voltage
VOH IOH=-0.1mA
Standby Current(CMOS)
ISB11)
Other inputs=0~Vcc
1) CS1≥VCC-0.2V, CS2≥VCC-0.2V(CS1
controlled) or
2) 0V ≤ CS2 ≤ 0.2V(CS2 controlled)
1. Standby mode is supposed to be set up after at least one active operation.after power up.
ISB1 is measured after 60ms from the time when standby mode is set up.
< 40°C
< 85°C
Min Typ Max Unit
-1 -
1 µA
-1 -
1 µA
- - 40 mA
- - 0.2 V
1.4 - - V
- - 130 µA
- - 250 µA
- 5 - Revision 1.0
April 2005
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet K1S2816BCM.PDF ] | |
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