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PDF IRF6636 Data sheet ( Hoja de datos )
| Número de pieza | IRF6636 | |
| Descripción | DirectFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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Hay una vista previa y un enlace de descarga de IRF6636 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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PD - 96977B
IRF6636www.DataSheet4U.com
DirectFET™ Power MOSFET
RoHS compliant containing no lead or bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
18nC 6.1nC 1.9nC 7.3nC 10nC 1.8V
Ideal for CPU Core DC-DC Converters
Optimized for for Control FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
ST DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
Description
The IRF6636 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6636 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6636 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Max.
20
±20
18
15
81
140
28
14
Units
V
A
mJ
A
20
ID = 18A
15
10
TJ = 125°C
5
TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs
Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
6.0
5.0 ID= 14A VDS= 16V
4.0 VDS= 10V
3.0
2.0
1.0
0.0
0
10 20 30
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Starting TJ = 25°C, L = 0.27mH, RG = 25Ω, IAS = 14A.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
1
06/13/05
1 page  
1000
100
10
TJ = 150°C
TJ = 25°C
TJ = -40°C
1
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
90
80
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
120
100
80
1000
100
10
1
IRF6636
www.DataSheet4U.com
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1msec
10msec
0.1
0.01
TA = 25°C
TJ = 150°C
Single Pulse
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
2.4
2.2
2.0
1.8
1.6 ID = 50µA
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
ID TOP
6.4A
9.8A
BOTTOM 14A
60
40
20
www.irf.com
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6636.PDF ] | |
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