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PDF IRF6678TRPbF Data sheet ( Hoja de datos )

Número de pieza IRF6678TRPbF
Descripción DirectFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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l RoHs Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
PD - 97223
IRF6678PbFwww.DataSheet4U.com
IRF6678TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.7m@ 10V 2.3m@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
43nC 15nC 4.0nC 46nC 28nC 1.8V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
MX
DirectFET™ ISOMETRIC
Description
The IRF6678PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6678PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-
ers that power high current loads such as the latest generation of microprocessors. The IRF6678PbF has been optimized for parameters that
are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
30 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
±20
30
24 A
150
240
210 mJ
24 A
20 6.0
15
ID = 29A
5.0 ID= 23A
4.0
VDS= 24V
VDS= 15V
10 3.0
5 TJ = 125°C
0 TJ = 25°C
0 1 2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
2.0
1.0
0.0
0
10 20 30 40 50 60
QG Total Gate Charge (nC)
Fig 2. Typical On-Resistance vs. Gate Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.75mH, RG = 25, IAS = 23A.
1
06/15/06

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IRF6678TRPbF pdf
IRF6678PbF
1000
1000
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OPERATION IN THIS AREA
LIMITED BY RDS(on)
100 100 100µsec
10
TJ = 150°C
TJ = 25°C
1 TJ = 40°C
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
180
160 Limited By Package
140
120
100
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1msec
10
10msec
1
TA = 25°C
TJ = 150°C
Single Pulse
0.1
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
2.2
2.0
1.8
1.6
1.4 ID = 250µA
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
www.irf.com
900
800
TOP
ID
8.7A
700 11A
BOTTOM 23A
600
500
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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