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PDF K4T51163QB-ZCD5 Data sheet ( Hoja de datos )

Número de pieza K4T51163QB-ZCD5
Descripción 512Mb B-die DDR2 SDRAM
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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512Mb B-die DDR2 SDRAM
wDwwD.DRata2ShSeeDt4UR.coAmM
512Mb B-die DDR2 SDRAM Specification
Version 1.5
July 2005
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
Page 1 of 28
Rev. 1.5 July 2005

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K4T51163QB-ZCD5 pdf
512Mb B-die DDR2 SDRAM
wDwDwR. 2D Sa Dt aRSAh Me e t 4 U . c
x8 package pinout (Top View) : 60ball FBGA Package
123
78 9
VDD
DQ6
VDDQ
NU/
RDQS
VSSQ
DQ1
VSS
DM/
RDQS
VDDQ
A
B
C
VSSQ DQS VDDQ
DQS
VSSQ
DQ7
VDDQ DQ0 VDDQ
DQ4
VSSQ
DQ3
D
DQ2
VSSQ
DQ5
VDDL VREF
VSS
E
VSSDL
CK
VDD
CKE WE F
RAS CK ODT
NC
BA0 BA1 G
CAS
CS
A10 A1 H
A2 A0 VDD
VSS
A3
A5 J
A6 A4
A7
A9 K
A11 A8 VSS
VDD
A12
NC L
NC A13
Notes:
1. Pins B3 and A2 have identical capacitance as pins B7 and A8.
2. For a read, when enabled, strobe pair RDQS & RDQS are identical in function and timing to strobe pair DQS
& DQS and input masking function is disabled.
3. The function of DM or RDQS/RDQS are enabled by EMRS command.
4. VDDL and VSSDL are power and ground for the DLL.
Ball Locations (x8)
: Populated Ball
+ : Depopulated Ball
Top View (See the balls through the Package)
123456789
A + ++
B + ++
C + ++
D + ++
E + ++
F+
+ ++
G
+ ++
+
H+
J
+ ++
+ ++
+
K+
+ ++
L
+ ++
+
Page 5 of 28
Rev. 1.5 July 2005

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K4T51163QB-ZCD5 arduino
512Mb B-die DDR2 SDRAM
wDwwD.DRata2ShSeeDt4UR.coAmM
3. Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to Vss
- 1.0 V ~ 2.3 V
V1
VDDQ
Voltage on VDDQ pin relative to Vss
- 0.5 V ~ 2.3 V
V1
VDDL
Voltage on VDDL pin relative to Vss
- 0.5 V ~ 2.3 V
V1
VIN, VOUT
Voltage on any pin relative to Vss
- 0.5 V ~ 2.3 V
V1
TSTG Storage Temperature
-55 to +100
°C 1, 2
Note :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2
standard.
4. AC & DC Operating Conditions
Recommended DC Operating Conditions (SSTL - 1.8)
Symbol
Parameter
Min.
Rating
Typ.
Max.
Units
Notes
VDD
Supply Voltage
1.7 1.8 1.9
V
VDDL
Supply Voltage for DLL
1.7 1.8 1.9
V
4
VDDQ
Supply Voltage for Output
1.7 1.8 1.9
V
4
VREF
Input Reference Voltage
0.49*VDDQ
0.50*VDDQ
0.51*VDDQ
mV
1,2
VTT Termination Voltage
VREF-0.04
VREF
VREF+0.04
V
3
Note :
There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or equal to
VDD.
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5
x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. AC parameters are measured with VDD, VDDQ and VDDL tied together
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Rev. 1.5 July 2005

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