DataSheet.es    


PDF PDTB113E Data sheet ( Hoja de datos )

Número de pieza PDTB113E
Descripción PNP 500mA 50V resistor-equipped transistors
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



Hay una vista previa y un enlace de descarga de PDTB113E (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! PDTB113E Hoja de datos, Descripción, Manual

PDTB113E series
www.DataSheet4U.com
PNP 500 mA, 50 V resistor-equipped transistors;
R1 = 1 kΩ, R2 = 1 kΩ
Rev. 02 — 16 November 2009
Product data sheet
1. Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistors (RET) family.
Table 1. Product overview
Type number
Package
NXP
PDTB113EK
SOT346
PDTB113ES[1]
SOT54
PDTB113ET
SOT23
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
NPN complement
PDTD113EK
PDTD113ES
PDTD113ET
1.2 Features
„ Built-in bias resistors
„ Simplifies circuit design
„ 500 mA output current capability
„ Reduces component count
„ Reduces pick and place costs
„ ±10 % resistor ratio tolerance
1.3 Applications
„ Digital application in automotive and
industrial segments
„ Controlling IC inputs
„ Cost-saving alternative for BC807 series
in digital applications
„ Switching loads
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ Max Unit
- - 50 V
- - 500 mA
0.7 1.0 1.3 kΩ
0.9 1.0 1.1

1 page




PDTB113E pdf
NXP Semiconductors
PDTB113E series
PNP 500 mA resistor-equipped transistors;wRw1w=.D1atkaΩSh,eRet24U=.c1omkΩ
103
hFE
102
10
006aaa345
(1)
(2)
(3)
101
VCEsat
(V)
006aaa346
(1)
(2)
(3)
1
101
101
1
10
102
103
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 40 °C
Fig 1. DC current gain as a function of collector
current; typical values
10 006aaa347
VI(on)
(V)
1
(1)
(2)
(3)
102
10
102
IC (mA)
103
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
10 006aaa348
VI(off)
(V)
1
(1)
(2)
(3)
101
101
1
10
102
103
IC (mA)
VCE = 0.3 V
(1) Tamb = 40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
101
101
1 10
IC (mA)
VCE = 5 V
(1) Tamb = 40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Off-state input voltage as a function of
collector current; typical values
PDTB113E_SER_2
Product data sheet
Rev. 02 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
5 of 10

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet PDTB113E.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
PDTB113EPNP 500mA 50V resistor-equipped transistorsNXP Semiconductors
NXP Semiconductors
PDTB113Z50 V resistor-equipped transistorsNXP Semiconductors
NXP Semiconductors
PDTB113ZK50V resistor-equipped transistorsNXP Semiconductors
NXP Semiconductors

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar