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Número de pieza | PDTB113E | |
Descripción | PNP 500mA 50V resistor-equipped transistors | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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PNP 500 mA, 50 V resistor-equipped transistors;
R1 = 1 kΩ, R2 = 1 kΩ
Rev. 02 — 16 November 2009
Product data sheet
1. Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistors (RET) family.
Table 1. Product overview
Type number
Package
NXP
PDTB113EK
SOT346
PDTB113ES[1]
SOT54
PDTB113ET
SOT23
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
NPN complement
PDTD113EK
PDTD113ES
PDTD113ET
1.2 Features
Built-in bias resistors
Simplifies circuit design
500 mA output current capability
Reduces component count
Reduces pick and place costs
±10 % resistor ratio tolerance
1.3 Applications
Digital application in automotive and
industrial segments
Controlling IC inputs
Cost-saving alternative for BC807 series
in digital applications
Switching loads
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ Max Unit
- - −50 V
- - −500 mA
0.7 1.0 1.3 kΩ
0.9 1.0 1.1
1 page NXP Semiconductors
PDTB113E series
PNP 500 mA resistor-equipped transistors;wRw1w=.D1atkaΩSh,eRet24U=.c1omkΩ
103
hFE
102
10
006aaa345
(1)
(2)
(3)
−10−1
VCEsat
(V)
006aaa346
(1)
(2)
(3)
1
10−1
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
−10 006aaa347
VI(on)
(V)
−1
(1)
(2)
(3)
−10−2
−10
−102
IC (mA)
−103
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
−10 006aaa348
VI(off)
(V)
−1
(1)
(2)
(3)
−10−1
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
−10−1
−10−1
−1 −10
IC (mA)
VCE = −5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Off-state input voltage as a function of
collector current; typical values
PDTB113E_SER_2
Product data sheet
Rev. 02 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
5 of 10
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Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet PDTB113E.PDF ] |
Número de pieza | Descripción | Fabricantes |
PDTB113E | PNP 500mA 50V resistor-equipped transistors | NXP Semiconductors |
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PDTB113ZK | 50V resistor-equipped transistors | NXP Semiconductors |
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