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PDF IRAMX16UP60B Data sheet ( Hoja de datos )

Número de pieza IRAMX16UP60B
Descripción Integrated Power Hybrid IC for Appliance Motor Drive Applications
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD-96-957 RevD
IRAMX16UP60B
Series
Integrated Power Hybrid IC for
16A, 600V
Appliance Motor Drive Applications.
Description
with Internal Shunt Resistor
International Rectifier's IRAMX16UP60B is a 16A, 600V Integrated Power Hybrid IC with Internal Shunt
Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as
well as for light industrial application. IR's technology offers an extremely compact, high performance AC
motor-driver in a single isolated package to simplify design.
This advanced HIC is a combination of IR's low VCE(on) Punch-Through IGBT technology and the industry
benchmark 3 phase high voltage, high speed driver in a fully isolated thermally enhanced package.
A built-in temperature monitor and over-current protection, along with the short-circuit rated IGBTs and
integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a
Single in line package (SiP2) with full transfer mold structure minimizes PCB space and resolve isolation
problems to heatsink.
Features
• Internal Shunt Resistor
• Integrated Gate Drivers and Bootstrap Diodes
• Temperature Monitor
• Low VCE(on) Non Punch Through IGBT Technology
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise immunity
Motor Power range 0.75~2.2kW / 85~253 Vac
Isolation 2000VRMS min
• UL certification pending (UL number: E78996)
Absolute Maximum Ratings
Parameter
Description
Value
Units
VCES / VRRM
V+
IGBT/Diode Blocking Voltage
Positive Bus Input Voltage
600
V
450
IO @ TC=25°C
RMS Phase Current (Note 1)
16
IO @ TC=100°C
RMS Phase Current (Note 1)
8A
IO Pulsed RMS Phase Current (Note 2)
30
FPWM
PWM Carrier Frequency
20 kHz
PD Power dissipation per IGBT @ TC =25°C
31 W
VISO Isolation Voltage (1min)
2000
VRMS
TJ (IGBT & Diodes)
TJ (Driver IC)
Operating Junction temperature Range
Operating Junction temperature Range
-40 to +150
-40 to +150
°C
T Mounting torque Range (M3 screw)
0.5 to 1.0
Nm
Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: tP<100ms; TC=25°C; FPWM=16kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics"
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IRAMX16UP60B
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM/ITRIP and are
applicable to all six channels. (Note 3)
Symbol
Definition
Min Typ Max Units
VINH , VENH
VINL , VENL
VCCUV+, VBSUV+
VCCUV-, VBSUV-
VCCUVH, VBSUVH
VIN,Clamp
IQBS
IQCC
ILK
IIN+, IEN+
IIN-, IEN-
ITRIP+
ITRIP-
V(ITRIP)
V(ITRIP, HYS)
RON,FLT
Logic "0" input voltage
Logic "1" input voltage
VCC and VBS supply undervoltage Positive going threshold
VCC and VBS supply undervoltage Negative going threshold
VCC and VBS supply undervoltage lock-out hysteresis
Input Clamp Voltage (HIN, LIN, ITRIP) IIN=10µA
Quiescent VBS supply current VIN=0V
Quiescent VCC supply current VIN=0V
Offset Supply Leakage Current
Input bias current VIN=5V
Input bias current VIN=0V
ITRIP bias current VITRIP=5V
ITRIP bias current VITRIP=0V
ITRIP threshold Voltage
ITRIP Input Hysteresis
Fault Output ON Resistance
3.0
---
10.6
10.4
---
4.9
---
---
---
---
---
---
---
440
---
---
---
---
11.1
10.9
0.2
5.2
---
---
---
200
100
30
0
490
70
50
---
0.8
11.6
11.4
---
5.5
165
3.35
60
300
220
100
1
540
---
100
V
V
V
V
V
V
µA
mA
µA
µA
µA
µA
µA
mV
mV
ohm
Dynamic Electrical Characteristics
Driver only timing unless otherwise specified.
Symbol
Parameter
Min Typ Max Units Conditions
TON
Input to Output propagation turn-
on delay time (see fig.11)
---
590
---
ns VCC=VBS= 15V, IC=8A,
TOFF
Input to Output propagation turn-
off delay time (see fig. 11)
---
660
---
V+=400V
ns
TFLIN
TBLT-Trip
DT
MT
TITrip
TFLT-CLR
Input Filter time (HIN, LIN)
100 200
---
ns VIN=0 & VIN=5V
ITRIP Blancking Time
100 150
ns VIN=0 & VIN=5V
Dead Time (VBS=VDD=15V)
220 290 360
ns VBS=VCC=15V
Matching Propagation Delay Time
(On & Off)
ITrip to six switch to turn-off
propagation delay (see fig. 2)
---
---
40 75 ns VCC= VBS= 15V, external dead
time> 400ns
---
1.75
µs
VCC=VBS= 15V, IC=8A,
V+=400V
Post ITrip to six switch to turn-off ---
7.7
---
TC = 25°C
ms
clear time (see fig. 2)
--- 6.7 ---
TC = 100°C
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IRAMX16UP60B
150
125 T = 150°C
J
Sinusoidal Modulation
100
75
F = 12 kHz
50 PWM
F = 16 kHz
PWM
25
F = 20 kHz
PWM
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Output Phase Current - ARMS
Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation
V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
150
125 T = 150°C
J
Sinusoidal Modulation
100
75
F = 12 kHz
50 PWM
F = 16 kHz
PWM
25
F = 20 kHz
PWM
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Output Phase Current - ARMS
Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation
VBUS=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
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