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Número de pieza | IC41LV44002AS | |
Descripción | 4M x 4 bit DYNAMIC RAM WITH EDO PAGE MODE | |
Fabricantes | Integrated Silicon Solution | |
Logotipo | ||
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No Preview Available ! IC41C44002A/IC41C44002AS(L)
IC41LV44002A/IC41LV44002AS(L)
Document Title
4Mx4 bit Dynamic RAM with EDO Page Mode
Revision History
Revision No
0A
History
Initial Draft
www.DataSheet4U.com
Draft Date
Remark
September 4,2001
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc.
DR026-0A 09/04/2001
1
1 page IC41C44002A/IC41C44002AS(L)
IC41LV44002A/IC41LV44002AS(L)
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameters
Rating Unit
VT
Voltage on Any Pin Relative to GND
5V −1.0 to +7.0 V
3.3V −0.5 to +4.6
VCC Supply Voltage
5V
3.3V
−1.0 to +7.0 V
−0.5 to +4.6
IOUT Output Current
50 mA
PD Power Dissipation
1W
TA Commercial Operation Temperature
0 to +70
oC
TSTG
Storage Temperature
−55 to +125 oC
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
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RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
VCC
VIH
VIL
TA
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Commercial Ambient Temperature
5V
3.3V
5V
3.3V
5V
3.3V
Min. Typ.
4.5 5.0
3.0 3.3
2.4 −
2.0 −
−1.0 −
−0.3 −
0−
Max.
5.5
3.6
VCC + 1.0
VCC + 0.3
0.8
0.8
70
Unit
V
V
V
oC
CAPACITANCE(1,2)
Symbol
Parameter
Max.
Unit
CIN1 Input Capacitance: A0-A10(A11)
CIN2 Input Capacitance: RAS, CAS, WE, OE
CIO Data Input/Output Capacitance: I/O0-I/O3
5 pF
7 pF
7 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25oC, f = 1 MHz.
Integrated Circuit Solution Inc.
DR026-0A 09/04/2001
5
5 Page IC41C44002A/IC41C44002AS(L)
IC41LV44002A/IC41LV44002AS(L)
EARLY WRITE CYCLE (OE = DON'T CARE)
RAS
tCRP
CAS
tRAS
tRC
tRCD
tCSH
tRSH
tCAS
tASR
tRAD
tRAH tASC
tRAL
tCAH
ADDRESS
Row
WE
Column
tCWL
tRWL
tWCS
tWCH
tWP
tDS tDH
I/O Valid Data
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tRP
Row
Integrated Circuit Solution Inc.
DR026-0A 09/04/2001
11
11 Page |
Páginas | Total 20 Páginas | |
PDF Descargar | [ Datasheet IC41LV44002AS.PDF ] |
Número de pieza | Descripción | Fabricantes |
IC41LV44002A | 4M x 4 bit DYNAMIC RAM WITH EDO PAGE MODE | Integrated Silicon Solution |
IC41LV44002AS | 4M x 4 bit DYNAMIC RAM WITH EDO PAGE MODE | Integrated Silicon Solution |
IC41LV44002ASL | 4M x 4 bit DYNAMIC RAM WITH EDO PAGE MODE | Integrated Silicon Solution |
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