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PDF M36W0R6040T0 Data sheet ( Hoja de datos )
| Número de pieza | M36W0R6040T0 | |
| Descripción | 64 Mbit Flash Memory and 16 Mbit PSRAM Multi-Chip Package | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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M36W0R6040T0
M36W0R6040B0
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory
and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
FEATURES SUMMARY
■ MULTI-CHIP PACKAGE
– 1 die of 64 Mbit (4Mb x 16) Flash Memory
– 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM
■ SUPPLY VOLTAGE
– VDDF = VDDP = VDDQ = 1.7V to 1.95V
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code (Top Flash Configuration),
M36W0R6040T0: 8810h
– Device Code (Bottom Flash
Configuration), M36W0R6040B0: 8811h
■ PACKAGES
– Compliant with Lead-Free Soldering
Processes
– Lead-Free Versions
FLASH MEMORY
■ PROGRAMMING TIME
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
■ MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit
Banks
– Parameter Blocks (Top location)
■ SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 66MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 70ns
■ DUAL OPERATIONS
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
Figure 1. Package
FBGA
Stacked TFBGA88 (ZA)
8 x 10mm
■ BLOCK LOCKING
– All blocks locked at Power-up
– Any combination of blocks can be locked
– WPF for Block Lock-Down
■ SECURITY
– 128-bit user programmable OTP cells
– 64-bit unique device number
■ COMMON FLASH INTERFACE (CFI)
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
PSRAM
■ ACCESS TIME: 70ns
■ LOW STANDBY CURRENT: 110µA
■ DEEP POWER DOWN CURRENT: 10µA
December 2004
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M36W0R6040T0, M36W0R6040B0
Figure 3. TFBGA Connections (Top view through package)
12345678
A DU DU
DU DU
B
A4
A18
A19
VSS
VDDF
NC
A21 A11
C
A5
LBP
NC
VSS
NC
KF
NC A12
D
A3 A17 NC VPPF WP EP
A9 A13
E
A2
A7
NC WPF LF
A20 A10 A15
F
A1
A6
UBP
RPF
WF
A8
A14 A16
G
A0
DQ8
DQ2
DQ10
DQ5
DQ13 WAITF
NC
H
GP
DQ0
DQ1
DQ3
DQ12 DQ14
DQ7
NC
J
NC
GF
DQ9
DQ11
DQ4
DQ6
DQ15
VDDQ
K EF NC NC NC VDDP NC VDDQ E2P
L
VSS
VSS
VDDQ
VDDF
VSS
VSS
VSS
VSS
M DU DU
DU DU
AI08525
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M36W0R6040T0, M36W0R6040B0
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 3. Absolute Maximum Ratings
Symbol
Parameter
Value
Min Max
Unit
TA Ambient Operating Temperature
–30 85 °C
TBIAS
Temperature Under Bias
–40 125 °C
TSTG
Storage Temperature
–65 155 °C
TLEAD
Lead Temperature during Soldering
(1) °C
VIO Input or Output Voltage
–0.5
VDDQ+0.6
V
VDDF
Flash Memory Core Supply Voltage
–0.2
2.45 V
VDDQ
Input/Output Supply Voltage
–0.2
2.45 V
VDDP
PSRAM Supply Voltage
–0.2
3.3 V
VPPF
Flash Memory Program Voltage
–0.2
14 V
IO Output Short Circuit Current
100 mA
tVPPFH
Time for VPPF at VPPFH
100 hours
Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
11/18
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