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PDF M36L0R7040B0 Data sheet ( Hoja de datos )

Número de pieza M36L0R7040B0
Descripción 128 Mbit Flash Memory and 16 Mbit PSRAM 1.8V Supply Multi-Chip Package
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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M36L0R7040T0
M36L0R7040B0
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory
and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
FEATURES SUMMARY
MULTI-CHIP PACKAGE
– 1 die of 128 Mbit (8Mb x16, Multiple Bank,
Multi-level, Burst) Flash Memory
– 1 die of 16 Mbit (1Mb x16) Pseudo SRAM
SUPPLY VOLTAGE
– VDDF = VDDP = VDDQ = 1.7 to 1.95V
– VPP = 9V for fast program (12V tolerant)
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code (Top Flash Configuration)
M36L0R7040T0: 88C4h
– Device Code (Bottom Flash
Configuration) M36L0R7040B0: 88C5h
PACKAGE
– Compliant with Lead-Free Soldering
Processes
– Lead-Free Versions
FLASH MEMORY
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 54MHz
– Asynchronous Page Read mode
– Random Access: 85ns
SYNCHRONOUS BURST READ SUSPEND
PROGRAMMING TIME
– 10µs typical Word program time using
Buffer Program
MEMORY ORGANIZATION
– Multiple Bank Memory Array: 8 Mbit
Banks
– Parameter Blocks (Top or Bottom
location)
DUAL OPERATIONS
– program/erase in one Bank while read in
others
– No delay between read and write
operations
SECURITY
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
Figure 1. Package
FBGA
TFBGA88 (ZAQ)
8 x 10mm
BLOCK LOCKING
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WPF for Block Lock-Down
– Absolute Write Protection with VPP = VSS
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
PSRAM
ACCESS TIME: 70ns
LOW STANDBY CURRENT: 110µA
DEEP POWER DOWN CURRENT: 10µA
December 2004
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M36L0R7040B0 pdf
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M36L0R7040T0, M36L0R7040B0
Figure 3. TFBGA Connections (Top view through package)
12345678
A DU DU
DU DU
B
A4
A18
A19
VSS
VDDF
NC
A21 A11
C
A5 LBP NC VSS NC
KF A22 A12
D
A3 A17 NC VPPF WP EP
A9 A13
E
A2
A7
NC WPF LF
A20 A10 A15
F
A1
A6
UBP
RPF
WF
A8 A14 A16
G
A0
DQ8
DQ2
DQ10
DQ5
DQ13
WAITF
NC
H
GP
DQ0
DQ1
DQ3
DQ12
DQ14
DQ7
NC
J
NC
GF
DQ9
DQ11
DQ4
DQ6
DQ15
VDDQ
K
EF
DU
DU
NC
VDDP
NC
VDDQ
E2P
L
VSS
VSS
VDDQ
VDDF
VSS
VSS
VSS
VSS
M DU DU
DU DU
AI08732
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M36L0R7040T0, M36L0R7040B0
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 3. Absolute Maximum Ratings
Symbol
Parameter
Value
Min Max
Unit
TA Ambient Operating Temperature
–25
85 °C
TBIAS
Temperature Under Bias
–25 85 °C
TSTG
Storage Temperature
–65 125 °C
TLEAD
Lead Temperature during Soldering
(1) °C
VIO Input or Output Voltage
–0.2
3.3 V
VDDF, VDDQ,
VDDP
Core and Input/Output Supply Voltages
–0.2
2.5 V
VPPF
Flash Program Voltage
–0.2
14 V
IO Output Short Circuit Current
100 mA
tVPPFH
Time for VPPF at VPPFH
100 hours
Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
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