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Número de pieza | M41T56C64 | |
Descripción | Serial Real Time Clock | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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M41T56C64
Serial Real Time Clock with 56 bytes of NVRAM
+ 64 Kbit (8192 bit x 8) EEPROM
Feature summary
■ 5V ±10% supply voltage
■ I2C bus compatible
■ Operating temperature of –40 to 85°C
■ Packaging includes:
– 18-lead SOIC (with embedded crystal)
■ RoHS compliant
Serial RTC features
■ Counters for seconds, minutes, hours, day,
date, month, years, and century
■ Embedded crystal package
■ Software clock calibration
■ Automatic power-fail detect and switch circuitry
■ 56 bytes of general purpose SRAM
■ Ultra-low battery supply current of 450nA
■ Automatic leap year compensation
■ Special software programmable output
■ Two-wire I2C serial interface supports 100kHz
protocol
Serial EEPROM features
■ 8192 bytes of general purpose EEPROM
(more than 1e6 erase/write cycles)
■ Two-wire I2C serial interface supports 400kHz
protocol
■ Byte and page write (up to 32 bytes)
■ More than 40 year data retention
■ Self-timed programming cycle
Embedded crystal
18
1
SOX18(MY)
18-pin (300mil) SOIC
September 2006
Rev 4
1/19
www.st.com
1
1 page M41T56C64
1 Summary description
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The M41T56C64 is a low power, Serial Real Time Clock with 56 bytes of NVRAM plus a
64Kb EEPROM (see Figure 3). A built-in 32,768Hz oscillator (crystal controlled) and the first
8 bytes of the RAM are used for the clock/calendar function and are configured in binary
coded decimal (BCD) format. Addresses and data are transferred serially via a two-line, bi-
directional bus. The built-in address register is incremented automatically after each WRITE
or READ data byte.
The M41T56C64 clock has a built-in power sense circuit which detects power failures and
automatically switches to the battery supply during power failures. The energy needed to
sustain the RAM and clock operations can be supplied from a small lithium coin cell.
Typical data retention time for the Serial RTC is in excess of 10 years with a 50mAh, 3V
lithium cell. The M41T56C64 is supplied in an 18-lead Plastic SOIC package.
1.1 Calibration
As the crystal is molded together with the silicon in this package, ST can program the
appropriate calibration value necessary to achieve ±5 ppm accuracy at 25°C after two SMT
reflows (see Figure 4). This calibration value will be written into address 1550h of
the EEPROM. This clock accuracy can then be guaranteed to drift no more than ±3 ppm the
first year, and ±1 ppm for each following year due to crystal aging.
Figure 1. Logic diagram
VCC VBAT
SCL
E0
E1
E2
WC
M41T56
+
M24C64
(EEPROM)
SDA
FT/OUT(1)
1. Open drain output
VSS
AI09123
5/19
5 Page M41T56C64
6 DC and AC parameters
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This section summarizes the operating and measurement conditions, as well as the DC and
AC characteristics of the device. The parameters in the following DC and AC characteristic
tables are derived from tests performed under the measurement conditions listed in the
relevant tables. Designers should check that the operating conditions in their projects match
the measurement conditions when using the quoted parameters.
Table 4. Operating and AC measurement conditions(1)
Parameter
Value
Supply voltage (VCC)
4.5 to 5.5
Ambient operating temperature (TA)
–40 to 85
Load capacitance (CL)
100
Input rise and fall times
50 (max)
Input pulse voltages
0.2VCC to 0.8VCC
Input and output timing ref. voltages
0.3VCC to 0.7VCC
1. Output Hi-Z is defined as the point where data is no longer driven.
Figure 5. AC measurement I/O waveform
Unit
V
°C
pF
ns
V
V
0.8VCC
0.2VCC
0.7VCC
0.3VCC
AI02568
11/19
11 Page |
Páginas | Total 19 Páginas | |
PDF Descargar | [ Datasheet M41T56C64.PDF ] |
Número de pieza | Descripción | Fabricantes |
M41T56C64 | Serial Real Time Clock | STMicroelectronics |
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