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PDF IRF6614 Data sheet ( Hoja de datos )

Número de pieza IRF6614
Descripción DirectFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD -96907A
IRF6614www.DataSheet4U.com
DirectFET™ Power MOSFET ‚
l Application Specific MOSFETs
l Lead and Bromide Free 
l Low Profile (<0.7 mm)
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
40V max ±20V max 5.9m@ 10V 7.1m@ 4.5V
l Dual Sided Cooling Compatible 
Qg tot
l Ultra Low Package Inductance
19nC
l Optimized for High Frequency Switching above 1MHz 
Qgd
6.0nC
Qgs2
1.4nC
Qrr
5.5nC
Qoss Vgs(th)
9.5nC 1.8V
l Ideal for CPU Core and Telecom Synchronous
Rectification in DC-DC Converters
l Optimized for Control FET socket of Sync. Buck Converter
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques 
ST DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
Description
The IRF6614 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal
resistance by 80%.
The IRF6614 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest genera-
tion of processors operating at higher frequencies. The IRF6614 has been optimized for parameters that are critical in synchronous
buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
40 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
20
16
Gate-to-Source Voltage
hContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
kContinuous Drain Current, VGS @ 10V
ePulsed Drain Current
fSingle Pulse Avalanche Energy
ÃeAvalanche Current
ID = 12.7A
12
10 ID= 10.2A
8
±20
12.7
10.1
55
102
22
10.2
VDS= 32V
VDS= 20V
A
mJ
A
12 TJ = 125°C 6
8 TJ = 25°C
4
2
4
2.0 4.0 6.0 8.0 10.0
VGS, Gate-to-Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET MOSFETs
ƒ Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
0
0 10 20 30 40 50
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ Starting TJ = 25°C, L = 0.43mH, RG = 25, IAS = 10.2A.
† Surface mounted on 1 in. square Cu board, steady state.
‰ TC measured with thermocouple mounted to top (Drain) of part.
1
11/8/04

1 page




IRF6614 pdf
100.0
10.0
1.0
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
0.1
0.2 0.6 1.0 1.4 1.8 2.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60
50
40
30
20
10
0
25
50 75 100 125
TJ , Junction Temperature (°C)
150
Fig 12. Maximum Drain Current vs. Case Temperature
100
80
60
1000
100
IRF6614
www.DataSheet4U.com
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
1msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.01
0.10
10msec
1.00
10.00
100.00
VDS , Drain-toSource Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
2.0
ID = 250µA
1.5
1.0
0.5
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 4.3A
6.4A
BOTTOM 10.2A
40
20
www.irf.com
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
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