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PDF DMV1500SD Data sheet ( Hoja de datos )
| Número de pieza | DMV1500SD | |
| Descripción | DAMPER MODULATION DIODE | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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DMV1500SD
Damper + modulation diode for CRT TV
Features
Damper
Modulation
■ Full kit in one package
123
■ High breakdown voltage capability
■ Very fast recovery diode
■ Specified turn on switching characteristics
■ Low static and peak forward voltage drop for
3
2
1
low dissipation
■ Insulated version:
t(s)– Insulated voltage = 2000 VRMS
– Capacitance = 7 pF
uc■ Planar technology allowing high quality and
dbest electrical characteristics
ro■ Outstanding performance of well proven DTV
Pas damper and new faster Turbo 2 600 V
tetechnology as modulation
oleDescription
bsHigh voltage semiconductor especially designed
Ofor horizontal deflection stage in standard and
-high resolution video display with E/W correction.
t(s)The insulated TO-220FPAB package includes
both the damper diode and the modulation diode,
ucthanks to a dedicated design.
dAssembled on automated line, it offers very low
rodispersion values on insulating and thermal
Obsolete Pperformanes.
TO-220FPAB
DMV1500SDFD
3
1
2
TO-220FPAB FD6 bending
DMV1500SDFD6 (optional)
Table 1. Device summary
Symbol
Damper
IF(AV)
IFpeak (max)
VRRM
trr (typ)
VF (typ)
VFP (typ)
6A
12 A
1500 V
150 ns
1.1 V
26 V
Modulation
6A
12 A
600 V
60 ns
1.0 V
5V
December 2008
Rev 4
1/9
www.st.com
9
1 page  
DMV1500SD
Characteristics
Figure 11. Transient peak forward voltage vs. Figure 12. Transient peak forward voltage vs.
dIF/dt (damper diode, typical
values)
dIF/dt (modulation diode, typical
values)
VFP(V)
50
IF=IP
45 Tj=100°C
40
35
30
25
20
15
10
5 dIF/dt(A/µs)
0
0 20 40 60 80 100 120 140 160 180 200
VFP(V)
10
IF=IP
9 Tj=100°C
8
7
6
5
4
3
2
1 dIF/dt(A/µs)
0
0 20 40 60 80 100 120 140 160 180 200
Figure 13. Forward recovery time vs. dIF/dt
(damper diode, typical values)
)tfr(ns)
t(s800
700
uc600
IF=IP
Tj=100°C
VFR=3V
d500
ro400
P300
te200
le100
so0
b0
20 40
dIF/dt(A/µs)
60 80 100 120 140 160 180 200
Figure 14. Forward recovery time vs. dIF/dt
(modulation diode, typical values)
tfr(ns)
140
120
100
IF=IP
Tj=100°C
VFR=2V
80
60
40
20
0
0
20 40
dIF/dt(A/µs)
60 80 100 120 140 160 180 200
- OFigure 15. Relative variation of dynamic
)parameters vs. junction
t(stemperature
cIRM, VFP, QRR [Tj]/ IRM, VFP, QRR [Tj=125°C]
u1.2
rod1.0
P0.8
VFP
te0.6
IRM
le0.4
oQRR
Obs0.2
Tj(°C)
Figure 16. Junction capacitance vs. reverse
voltage applied (typical values)
C(pF)
100
MODULATION diode
F=1MHz
VOSC=30mVRMS
Tj=25°C
10 DAMPER diode
VR(V)
0.0 1
25 50 75 100 125 1
10 100 1000
5/9
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet DMV1500SD.PDF ] | |
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