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PDF 7MBR100U4B120 Data sheet ( Hoja de datos )

Número de pieza 7MBR100U4B120
Descripción Power Integrated Module
Fabricantes Fuji Electric 
Logotipo Fuji Electric Logotipo



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No Preview Available ! 7MBR100U4B120 Hoja de datos, Descripción, Manual

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SPECIFICATION
Device Name : Power Integrated Module
Type Name
: 7MBR100U4B120
Spec. No. :
MS6M 0856
Feb. 02 05 S.Miyashita
Feb. 02 05 M.W atanabe Y.Seki
K.Yamada
MS6M0856
1
15
H04-004-07b

1 page




7MBR100U4B120 pdf
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
Items
Symbols
Conditions
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Collector-Emitter
saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
ICES
IGES
VCE(sat)
(terminal)
VCE(sat)
(chip)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
VGE = 0V
VCE = 1200V
VCE = 0V
VGE=±20V
VCE = 20V
Ic = 100mA
VGE=15V
Tj= 25°C
Tj=125°C
Ic = 100A
Tj= 25°C
Tj=125°C
VCE=10V,VGE=0V,f=1MHz
Vcc = 600V
Ic = 100A
VGE=±15V
Rg = 9.1 Ω
VGE=0V
IF = 100A
IF = 100A
VGE = 0V
VCE = 1200V
VCE = 0V
VGE=±20V
VGE=15V
Ic = 50A
Vcc = 600V
Ic = 50A
VGE=±15V
Rg = 33 Ω
VR=1200V
VGE=0V
IF = 100A
VR=1600V
T = 25°C
T =100°C
T = 25/50°C
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
terminal
chip
www.DataSheet4U.com
Characteristics
min. typ. max.
Units
- - 1.0 mA
- - 200 nA
4.5 6.5 8.5 V
- 2.60 2.85
-
-
2.95
2.10
-
2.35
V
- 2.45
-
-8
- nF
- 0.38 1.20
- 0.13 0.60
- 0.03
- μs
- 0.41 1.00
- 0.07 0.30
- 2.60 2.85
-
-
2.90
2.10
-
2.35
V
- 2.40
-
- - 0.35 μs
- - 1.0 mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
465
3305
-
2.25
2.60
2.00
2.35
0.53
0.43
0.37
0.07
-
1.55
1.40
-
5000
495
3375
200
2.65
-
2.40
-
1.20
0.60
1.00
0.30
1.0
1.90
-
1.0
-
520
3450
nA
V
μs
mA
V
mA
Ω
K
MS6M0856
5
15
H04-004-03a

5 Page





7MBR100U4B120 arduino
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj= 25°C
10000
[ Inverter ]
Switching time vws.wCwo.DlleactatoSrhceuertr4eUn.tco(tmyp.)
Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj=125°C
10000
1000
100
ton
toff
tr
tf
10
0
50 100
Collector current : Ic [A]
150
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V, Tj= 25°C
10000
1000
100
ton
toff
tr
tf
10
1
10 100
Gate resistance : Rg [Ω]
1000
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V, Tj= 125°C
40
Eon
30
20
10
0
1
Eoff
Err
10 100
Gate resistance : Rg [Ω]
1000
1000
100
ton
toff
tr
tf
10
0
50 100
Collector current : Ic [A]
150
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1Ω
14
Eon(125°C)
12
Eon(25°C)
10 Eoff(125°C)
8 Err(125°C)
6 Eoff(25°C)
4 Err(25°C)
2
0
0 50 100 150
Collector current : Ic [A]
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 9.1Ω ,Tj <= 125°C
250
200
150
100
50
0
0 400 800 1200
Collector-Emitter voltage : VCE [V]
MS6M0856
11
15
H04-004-03a

11 Page







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