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PDF UCLAMP3305P Data sheet ( Hoja de datos )
| Número de pieza | UCLAMP3305P | |
| Descripción | Low Voltage TVS | |
| Fabricantes | Semtech Corporation | |
| Logotipo |  |
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PROTECTION PRODUCTS - MicroClampTM
Description
The μClampTM series of TVS arrays are designed to
protect sensitive electronics from damage or latch-up
due to ESD, lightning, and other voltage-induced
transient events. Each device will protect up to four
lines operating at 3.3 volts.
The μClampTM3305P is a solid-state device designed
specifically for transient suppression. It is constructed
using Semtech’s proprietary EPD process technology.
The EPD process provides low standoff voltages with
significant reductions in leakage currents and capaci-
tance over traditional pn junction processes. They offer
desirable characteristics for board level protection
including fast response time, low clamping voltage and
no device degradation.
The μClamp3305P may be used to meet the immunity
requirements of IEC 61000-4-2, level 4 (±15kV air,
±8kV contact discharge). It is packaged in an ultra
small SLP1616P6 package with a low profile of only
0.58mm. The leads are spaced at a pitch of 0.5mm
and are finished with lead-free NiPdAu. The small
package makes it ideal for use in portable electronics
such as cell phones, digital still cameras, and notebook
computers.
uClamp3305P
Low Voltage TVS
for EwwSwD.DatPaSrheoett4eU.ccotmion
Features
Transient protection for data lines to
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
Small package for use in portable electronics
Protects five I/O lines
Working voltage: 3.3V
Low leakage current
Low operating and clamping voltages
Solid-state silicon-avalanche technology
Mechanical Characteristics
SLP1616P6 package
RoHS/WEEE Compliant
Nominal Dimensions: 1.6 x 1.6 x 0.58 mm
Lead Pitch: 0.5mm
Lead Finish: NiPdAu
Marking : Orientation Mark and Marking Code
Packaging : Tape and Reel
Applications
Cellular handsets and accessories
Notebooks and handhelds
MP3 Players
Digital cameras
Portable instrumentation
PDA’s
Circuit Diagram
134 5 6
Center Tab (GND)
Device Schematic
Revision 02/15/2008
Package
1.6
1
6
0.5
1.6
0.6
6 Pin SLP package (Bottom Side View)
1.6 x 1.6 x 0.58mm (Nominal)
1 www.semtech.com
1 page  
PROTECTION PRODUCTS
Applications Information
Device Connection Options
The μClamp3305P is designed to protect 5 signal lines
with an operating voltage of 0 to 3.3V. It will present a
high impedance to the protected line up to 3.3 volts. It
will “turn on” when the line voltage exceeds 3.5 volts.
The device is unidirectional and may be used on lines
where the signal polarity is above ground.
Pin 1,3,4,5,6 are connected to I/O signals. The center
tab is connected to system ground. Pin 2 should be left
open or not connected. All signal lines and ground
should be made with the lowest impedance and
inductance path as possible. This will improve signal
quality of the lines and keep the clamping voltage as low
as possible during a fast transient.
Due to the “snap-back” characteristics of the low
voltage TVS, it is not recommended that the I/O line be
directly connected to a DC source greater than snap-
back votlage (VSB) as the device can latch on.
EPD TVS Characteristics
These devices are constructed using Semtech’s
proprietary EPD technology. The structure of the EPD
TVS is vastly different from the traditional pn-junction
devices. At voltages below 5V, high leakage current
and junction capacitance render conventional ava-
lanche technology impractical for most applications.
However, by utilizing the EPD technology, these devices
can effectively operate at 3.3V while maintaining
excellent electrical characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. The EPD mecha-
nism is achieved by engineering the center region of
the device such that the reverse biased junction does
not avalanche, but will “punch-through” to a conduct-
ing state. This structure results in a device with supe-
rior DC electrical parameters at low voltages while
maintaining the capability to absorb high transient
currents.
uClamp3305P
www.DataSheet4U.com
Figure 1 - Circuit Diagram
134
5
6
Center Tab (GND)
Figure 2 - Layout Example
Figure 3 - EPD TVS IV Characteristic Curve
IPP
ISB
IPT
VF IR
IF
VRWM VSB VPT VC
© 2008 Semtech Corp.
5
www.semtech.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UCLAMP3305P.PDF ] | |
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