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PDF W9NK90Z Data sheet ( Hoja de datos )

Número de pieza W9NK90Z
Descripción STW9NK90Z
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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STB9NK90Z - STFPNK90Z
STP9NK90Z - STW9NK90Z
N-channel 900V - 1.1- 8A - TO-220 /FP- D2PAK - TO-247
Zener-protected superMESHTM MOSFET
General features
Type
STB9NK90Z
STW9NK90Z
STP9NK90Z
STF9NK90Z
VDSS
900V
900V
900V
900V
RDS(on)
<1.3
<1.3
<1.3
<1.3
ID
8A
8A
8A
8A
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Pw
160 W
160 W
160 W
160 W
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
Switching application
3
2
1
TO-220
3
1
D²PAK
TO-247
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STB9NK90Z
STF9NK90Z
STP9NK90Z
STW9NK90Z
Marking
B9NK90Z
F9NK90Z
P9NK90Z
W9NK90Z
Package
D²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
Tube
July 2006
Rev 4
1/16
www.st.com
16

1 page




W9NK90Z pdf
STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z
Electricwawl cwh.DaaratacStheereist4tUic.csom
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise Time
td(off)
tf
Turn-off delay time
Fall time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test conditions
VDD=450 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=450 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=720 V, ID=8A,
RG=4.7Ω, VGS=10V
(see Figure 20)
Min. Typ. Max. Unit
22 ns
13 ns
55 ns
28 ns
53 ns
11 ns
22 ns
Table 7. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1) Gate-Source Breakdown
Voltage
Igs=±1mA
(Open Drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD=8A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=8A,
di/dt = 100A/µs,
VDD=50V, Tj=150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
8A
32 A
1.6 V
950 ns
10 µC
21 A
5/16

5 Page





W9NK90Z arduino
STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z
Packagewmwwec.DhaatanSicheael td4Ua.tcaom
DIM.
A
b
b1
c
D
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA
mm.
TYP
16.40
28.90
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
11/16

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