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Número de pieza | PBSS5160U | |
Descripción | 60V 1A PNP low VCEsat (BISS) transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PBSS5160U (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 04 — 2 October 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160U.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High voltage DC-to-DC conversion
I High voltage MOSFET gate driving
I High voltage motor control
I High voltage power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage open base
collector current
peak collector current
collector-emitter saturation
resistance
single pulse;
tp ≤ 1 ms
IC = −1 A;
IB = −100 mA
-
[1] -
-
[2] -
- −60 V
- −1 A
- −2 A
255 340 mΩ
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1 page NXP Semiconductors
PBSS5160Uwww.DataSheet4U.com
60 V, 1 A PNP low VCEsat (BISS) transistor
103 006aaa503
Zth(j-a)
(K/W)
102
δ=1
0.50
0.20
0.75
0.33
0.10
0.05
10 0.02
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 006aaa504
Zth(j-a)
(K/W)
102
δ=1
0.50
0.20
0.75
0.33
0.10
0.05
10 0.02
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS5160U_4
Product data sheet
Rev. 04 — 2 October 2008
© NXP B.V. 2008. All rights reserved.
5 of 14
5 Page NXP Semiconductors
11. Soldering
PBSS5160Uwww.DataSheet4U.com
60 V, 1 A PNP low VCEsat (BISS) transistor
2.65
1.85
1.325
2.35
0.6
(3×)
2
3
1
1.3
0.5
(3×)
0.55
(3×)
Fig 16. Reflow soldering footprint SOT323 (SC-70)
1.425
(3×)
4.6
2.575
3.65 2.1
1.8
09
(2×)
Fig 17. Wave soldering footprint SOT323 (SC-70)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot323_fr
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot323_fw
PBSS5160U_4
Product data sheet
Rev. 04 — 2 October 2008
© NXP B.V. 2008. All rights reserved.
11 of 14
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet PBSS5160U.PDF ] |
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