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PDF PBSS5160K Data sheet ( Hoja de datos )
| Número de pieza | PBSS5160K | |
| Descripción | 60V 1A PNP low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS5160K
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 — 6 October 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT346 (SC-59A) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160K.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High voltage DC-to-DC conversion
I High voltage MOSFET gate driving
I High voltage motor control
I High voltage power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage open base
collector current
peak collector current
collector-emitter saturation
resistance
single pulse;
tp ≤ 1 ms
IC = −1 A;
IB = −100 mA
-
[1] -
-
[2] -
- −60 V
- −1 A
- −2 A
255 340 mΩ
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1 page  
NXP Semiconductors
PBSS5160Kwww.DataSheet4U.com
60 V, 1 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
δ=1
0.50
0.20
0.10
0.05
0.02
0.01
0.75
0.33
0
1
006aaa499
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
δ=1
0.50
0.20
0.05
0.02
0.01
0.75
0.33
0.10
0
1
006aaa500
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS5160K_3
Product data sheet
Rev. 03 — 6 October 2008
© NXP B.V. 2008. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
11. Soldering
PBSS5160Kwww.DataSheet4U.com
60 V, 1 A PNP low VCEsat (BISS) transistor
0.8 0.7
(3×) (3×)
3.4 2.35
3.3
1
0.7
(3×)
0.6
(3×)
3
12
1.9
1.9
2.9
Fig 16. Reflow soldering footprint SOT346 (SC-59A)
2.8
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot346_fr
5.2
1.7
(3×)
solder lands
2.9
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
2.2
1.2
(2×)
4.7
sot346_fw
Fig 17. Wave soldering footprint SOT346 (SC-59A)
PBSS5160K_3
Product data sheet
Rev. 03 — 6 October 2008
© NXP B.V. 2008. All rights reserved.
11 of 14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PBSS5160K.PDF ] | |
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