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PDF RMPA0951AT Data sheet ( Hoja de datos )

Número de pieza RMPA0951AT
Descripción 3V Cellular CDMA PowerEdge Power Amplifier Module
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! RMPA0951AT Hoja de datos, Descripción, Manual

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September 2004
RMPA0951AT
3V Cellular CDMA PowerEdge™ Power Amplifier Module
General Description
The RMPA0951AT is a dual mode, small-outline Power
Amplifier Module (PAM) for Cellular CDMA personal
communication system applications. The PA is internally-
matched to 50and DC blocked which minimizes the use
of external components and reduces circuit complexity for
system designers. High AMPS/CDMA efficiency and good
linearity are achieved using our InGaP Heterojunction
Bipolar Transistor (HBT) process.
Features
• Single positive-supply operation
• High dual-mode (AMPS/CDMA) efficiency
• Excellent linearity
• Small size: 6.0 x 6.0 x 1.5 mm3 LCC package
• 50matched input and output module
• Adjustable quiescent current and power-down mode
• Suitable for CDMA and CDMA2000 1X systems
Device
Absolute Ratings1
Symbol
Vc1, Vc2
Vref
Pin
VSWR
Tc
Tstg
Parameter
Supply Voltage
Reference Voltage
RF Input Power2
Load VSWR
Case Operating Temperature
Storage Temperature
Notes:
1: No permanent damage with only one parameter set at extreme limit and other parameters typical.
2: Typical RF input powers for (+28dBm, CDMA) is -3dBm and for (+31dBm, AMPS) is +2dBm.
Ratings
6.0
1.5 to 4.0
+7
6:1
-30 to +85
-55 to +150
Units
V
V
dBm
°C
°C
©2004 Fairchild Semiconductor Corporation
RMPA0951AT Rev. D

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RMPA0951AT pdf
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Application Information
Precautions to Avoid Permanent Device Damage:
Cleanliness: Observe proper handling procedures to
ensure clean devices and PCBs. Devices should remain
in their original packaging until component placement to
ensure no contamination or damage to RF, DC & ground
contact areas.
Device Cleaning: Standard board cleaning techniques
should not present device problems provided that the
boards are properly dried to remove solvents or water
residues.
Static Sensitivity: Follow ESD precautions to protect
against ESD damage:
– A properly grounded static-dissipative surface on
which to place devices.
– Static-dissipative floor or mat.
– A properly grounded conductive wrist strap for each
person to wear while handling devices.
General Handling: Handle the package on the top
with a vacuum collet or along the edges with a sharp
pair of bent tweezers. Avoiding damaging the RF, DC,
& ground contacts on the package bottom. Do not
apply excessive pressure to the top of the lid.
Device Storage: Devices are supplied in heat-sealed,
moisture-barrier bags. In this condition, devices are
protected and require no special storage conditions.
Once the sealed bag has been opened, devices
should be stored in a dry nitrogen environment.
Device Usage:
Fairchild recommends the following procedures prior to
assembly.
• Dry-bake devices at 125°C for 24 hours minimum. Note:
The shipping trays cannot withstand 125°C baking
temperature.
• Assemble the dry-baked devices within 7 days of
removal from the oven.
• During the 7-day period, the devices must be stored in an
environment of less than 60% relative humidity and a
maximum temperature of 30°C
• If the 7-day period or the environmental conditions have
been exceeded, then the dry-bake procedure must be
repeated.
Solder Materials & Temperature Profile:
Reflow soldering is the preferred method of SMT
attachment. Hand soldering is not recommended.
Reflow Profile
• Ramp-up: During this stage the solvents are evaporated
from the solder paste. Care should be taken to prevent
rapid oxidation (or paste slump) and solder bursts
caused by violent solvent out-gassing. A typical heating
rate is 1 - 2°C/sec.
• Pre-heat/soak: The soak temperature stage serves two
purposes; the flux is activated and the board and devices
achieve a uniform temperature. The recommended soak
condition is: 120 -150 seconds at 150°C.
• Reflow Zone: If the temperature is too high, then devices
may be damaged by mechanical stress due to thermal
mismatch or there may be problems due to excessive
solder oxidation. Excessive time at temperature can
enhance the formation of inter-metallic compounds at
the lead/board interface and may lead to early
mechanical failure of the joint. Reflow must occur prior to
the flux being completely driven off. The duration of peak
reflow temperature should not exceed 10 seconds.
Maximum soldering temperatures should be in the range
215 -220°C, with a maximum limit of 225°C.
• Cooling Zone: Steep thermal gradients may give rise to
excessive thermal shock. However, rapid cooling
promotes a finer grain structure and a more crack-
resistant solder joint. Figure 4 indicates the
recommended soldering profile.
Solder Joint Characteristics:
Proper operation of this device depends on a reliable void-
free attachment of the heatsink to the PWB. The solder joint
should be 95% void-free and be a consistent thickness.
Rework Considerations:
Rework of a device attached to a board is limited to reflow
of the solder with a heat gun. The device should not be
subjected to more than 225°C and reflow solder in the
molten state for more than 5 seconds. No more than 2
rework operations should be performed.
©2004 Fairchild Semiconductor Corporation
RMPA0951AT Rev. D

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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FAST
ISOPLANAR™
Power247™
Stealth™
ActiveArray™ FASTr™
LittleFET™
PowerEdge™
SuperFET™
Bottomless™ FPS™
MICROCOUPLER™ PowerSaver™
SuperSOT™-3
CoolFET™
FRFET™
MicroFET™
PowerTrench
SuperSOT™-6
CROSSVOLTGlobalOptoisolator™ MicroPak™
QFET
SuperSOT™-8
DOME™
GTO™
MICROWIRE™
QS™
SyncFET™
EcoSPARK™ HiSeC™
MSX™
QT Optoelectronics™ TinyLogic
E2CMOS™
I2C™
MSXPro™
Quiet Series™
TINYOPTO™
EnSigna™
i-Lo
OCX™
RapidConfigure™
TruTranslation™
FACT™
ImpliedDisconnect™ OCXPro™
FACT Quiet Series™
OPTOLOGIC
RapidConnect™
µSerDes™
UHC™
UltraFET
Across the board. Around the world.™ OPTOPLANAR™
The Power Franchise
PACMAN™
Programmable Active Droop™
POP™
SILENT SWITCHERVCX™
SMART START™
SPM™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANY LIABILITY
ARISING OUT OF THEAPPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEYANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I13

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