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PDF DIM2400ESS12-A000 Data sheet ( Hoja de datos )
| Número de pieza | DIM2400ESS12-A000 | |
| Descripción | Single Switch IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
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DIM2400ESS12-A000
Single Switch IGBT Module
DS5840-1.1 June 2005 (LN24075)
FEATURES
• 10µs Short Circuit Withstand
• Non Punch Through Silicon
• Isolated Copper Base plate
• Lead Free construction
APPLICATIONS
• High Power Inverters
• Motor Controllers
KEY PARAMETERS
VCES
VCE
*
(sat)
IC
IC(PK)
(typ)
(max)
(max)
1200V
2.2V
2400A
4800A
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 3600A.
The DIM2400ESS12-A000 is a single switch 1200V,
n channel enhancement mode, insulated gate
bipolar transistor (IGBT) module. The IGBT has a
wide reverse bias safe operating area (RBSOA) plus
full 10µs short circuit withstand.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM2400ESS12-A000
Note: When ordering, please use the whole part number.
Fig. 1 Single switch circuit diagram
Outline type code: E
(See package details for further information)
Fig. 2 Package
www.DataSheet4U.com
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/9
1 page  
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS
Tcase = 25° C unless stated otherwise.
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qg
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125° C unless stated otherwise.
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM2400ESS12-A000
Test Conditions
IC = 2400A
VGE = ±15V
VCE = 600V
RG(ON) = RG(OFF) = 1Ω
L ∼ 50nH
IF = 2400A, VR = 600V,
dlF/dt = 9500A/µs
Min. Typ. Max. Units
- 1370 -
ns
- 230 - ns
- 520 - mJ
- 250 - ns
- 230 - ns
- 180 - mJ
- 26 - µC
- 310 - µC
- 1000 -
A
- 150 - mJ
Test Conditions
IC = 2400A
VGE = ±15V
VCE = 600V
RG(ON) = RG(OFF) = 1Ω
L ∼ 50nH
IF = 2400A, VR = 600V,
dlF/dt = 8500A/µs
Min. Typ. Max. Units
- 1570 -
ns
- 230 - ns
- 600 - mJ
- 360 - ns
- 290 - ns
- 200 - mJ
- 540 - µC
- 1260 -
A
- 260 - mJ
www.DataSheet4U.com
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet DIM2400ESS12-A000.PDF ] | |
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