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PDF EBE10RD4AJFA Data sheet ( Hoja de datos )

Número de pieza EBE10RD4AJFA
Descripción 1GB Registered DDR2 SDRAM DIMM
Fabricantes Elpida Memory 
Logotipo Elpida Memory Logotipo



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DATA SHEET
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1GB Registered DDR2 SDRAM DIMM
EBE10RD4AJFA (128M words × 72 bits, 1 Rank)
Specifications
Features
Density: 1GB
Organization
128M words × 72 bits, 1 rank
Mounting 18 pieces of 512M bits DDR2 SDRAM
sealed in FBGA
Package: 240-pin socket type dual in line memory
module (DIMM)
PCB height: 30.0mm
Lead pitch: 1.0mm
Lead-free (RoHS compliant)
Power supply: VDD = 1.8V ± 0.1V
Data rate: 667Mbps/533Mbps/400Mbps (max.)
Four internal banks for concurrent operation
(components)
Interface: SSTL_18
Burst lengths (BL): 4, 8
/CAS Latency (CL): 3, 4, 5
Precharge: auto precharge option for each burst
access
Refresh: auto-refresh, self-refresh
Refresh cycles: 8192 cycles/64ms
Average refresh period
7.8µs at 0°C TC ≤ +85°C
3.9µs at +85°C < TC ≤ +95°C
Operating case temperature range
TC = 0°C to +95°C
Double-data-rate architecture; two data transfers per
clock cycle
The high-speed data transfer is realized by the 4 bits
prefetch pipelined architecture
Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge; data
referenced to both edges of DQS
Posted /CAS by programmable additive latency for
better command and data bus efficiency
Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
/DQS can be disabled for single-ended Data Strobe
operation
1 piece of PLL clock driver, 2 pieces of register driver
and 1 piece of serial EEPROM (2K bits EEPROM) for
Presence Detect (PD)
Document No. E1038E30 (Ver. 3.0)
Date Published March 2008 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2007-2008

1 page




EBE10RD4AJFA pdf
EBE10RD4AJFA
Serial PD Matrix*1
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Byte No.
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
Number of bytes utilized by module
manufacturer
1
0
0
0
0
0
0
0
80H
Total number of bytes in serial PD
device
0 0 0 0 1 0 0 0 08H
Memory type
0 0 0 0 1 0 0 0 08H
Number of row address
0 0 0 0 1 1 1 0 0EH
Number of column address
0 0 0 0 1 0 1 1 0BH
Number of DIMM ranks
0 1 1 0 0 0 0 0 60H
Module data width
0 1 0 0 1 0 0 0 48H
Module data width continuation
0 0 0 0 0 0 0 0 00H
Voltage interface level of this assembly 0 0 0 0 0 1 0 1 05H
DDR SDRAM cycle time, CL = 5
-6E
0 0 1 1 0 0 0 0 30H
-5C 0 0 1 1 1 1 0 1 3DH
-4A
SDRAM access from clock (tAC)
-6E
-5C
0 1 0 1 0 0 0 0 50H
0 1 0 0 0 1 0 1 45H
0 1 0 1 0 0 0 0 50H
-4A 0 1 1 0 0 0 0 0 60H
DIMM configuration type
0 0 0 0 0 0 1 0 02H
Refresh rate/type
1 0 0 0 0 0 1 0 82H
Primary SDRAM width
0 0 0 0 0 1 0 0 04H
Error checking SDRAM width
0 0 0 0 0 1 0 0 04H
Reserved
0 0 0 0 0 0 0 0 00H
SDRAM device attributes:
Burst length supported
0 0 0 0 1 1 0 0 0CH
SDRAM device attributes: Number of
banks on SDRAM device
0
0
0
0
0
1
0
0
04H
SDRAM device attributes:
/CAS latency
0 0 1 1 1 0 0 0 38H
DIMM Mechanical Characteristics
0 0 0 0 0 0 0 1 01H
DIMM type information
0 0 0 0 0 0 0 1 01H
SDRAM module attributes
0 0 0 0 0 0 0 0 00H
SDRAM device attributes: General 0 0 0 0 0 0 1 1 03H
Minimum clock cycle time at CL = 4
-6E, -5C
0
0
1
1
1
1
0
1
3DH
-4A 0 1 0 1 0 0 0 0 50H
Maximum data access time (tAC) from
clock at CL = 4
0 1 0 1 0 0 0 0 50H
-6E, -5C
-4A 0 1 1 0 0 0 0 0 60H
Minimum clock cycle time at CL = 3 0 1 0 1 0 0 0 0 50H
Maximum data access time (tAC) from
clock at CL = 3
0
1
1
0
0
0
0
0
60H
Minimum row precharge time (tRP) 0 0 1 1 1 1 0 0 3CH
Comments
128 bytes
256 bytes
DDR2 SDRAM
14
11
1
72
0
SSTL 1.8V
3.0ns*1
3.75ns*1
5.0ns*1
0.45ns*1
0.5ns*1
0.6ns*1
ECC
7.8µs
×4
×4
0
4,8
4
3, 4, 5
4.00mm max.
Registered
Normal
Weak Driver 50
ODT Support
3.75ns*1
5.0ns*1
0.5ns*1
0.6ns*1
5.0ns*1
0.6ns*1
15ns
Data Sheet E1038E30 (Ver. 3.0)
5

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EBE10RD4AJFA arduino
EBE10RD4AJFA
AC Overshoot/Undershoot Specification (DDR2 SDRAM Component Specification)
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Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
Maximum overshoot area above VDD
DDR2-667
DDR2-533
DDR2-400
Maximum undershoot area below VSS
DDR2-667
DDR2-533
DDR2-400
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
Maximum overshoot area above VDD
DDR2-667
DDR2-533
DDR2-400
Maximum undershoot area below VSS
DDR2-667
DDR2-533
DDR2-400
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
Maximum overshoot area above VDDQ
DDR2-667
DDR2-533
DDR2-400
Maximum undershoot area below VSSQ
DDR2-667
DDR2-533
DDR2-400
Pins
Command, Address,
CKE, ODT
CK, /CK
DQ, DQS, /DQS,
UDQS, /UDQS,
LDQS, /LDQS,
RDQS, /RDQS,
DM, UDM, LDM
Specification
0.5
0.5
0.8
1.0
1.33
0.8
1.0
1.33
0.5
0.5
0.23
0.28
0.38
0.23
0.28
0.38
0.5
0.5
0.23
0.28
0.38
0.23
0.28
0.38
Unit
V
V
V-ns
V-ns
V-ns
V-ns
V-ns
V-ns
V
V
V-ns
V-ns
V-ns
V-ns
V-ns
V-ns
V
V
V-ns
V-ns
V-ns
V-ns
V-ns
V-ns
Volts (V) VDD, VDDQ
VSS, VSSQ
Maximum amplitude
Overshoot area
Undershoot area
Time (ns)
Overshoot/Undershoot Definition
Data Sheet E1038E30 (Ver. 3.0)
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