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PDF VMM85-02F Data sheet ( Hoja de datos )

Número de pieza VMM85-02F
Descripción Dual Power HiPerFET Module
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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Dual Power
HiPerFETTM Module
VMM 85-02F
VDSS = 200 V
ID25 = 84 A
RDS(on) = 25 mW
Phaseleg Configuration
High dv/dt, Low trr, HDMOSTM Family
8
9
3
1
2
1
3
11
10
9
8
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID80
IDM
Ptot
TJ
TJM
Tstg
VISOL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
11
10 1 = Drain 1, Source 2
2 2 = Source 1
3 = Drain 2
8 = Gate 2
9 = Kelvin Source 2
10 = Kelvin Source 1
11 = Gate 1
Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 10 kW
Continuous
Transient
200 V
200 V
±20 V
±30 V
TC = 25°C
TC = 80°C
TC = 25°C, tp = 10 µs, pulse width limited by TJM
84
63
335
TC = 25°C
370
-40 ... +150
150
-40 ... +125
A
A
A
W
°C
°C
°C
50/60 Hz
IISOL £ 1 mA
t = 1 min
t=1s
Mounting torque (M5 or 10-32 UNF)
Terminal connection torque (M5)
3000
3600
V~
V~
2.25-2.75/20-25 Nm/lb.in.
2.5-4/22-35 Nm/lb.in.
Typical including screws
130 g
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V
VDS = VGS, ID = 8 mA
VGS = ±20 V DC, VDS = 0
VDS = VDSS,
VGS = 0 V, TJ = 25°C
VDS = 0.8 • VDSS, VGS = 0 V, TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 µs, duty cycle d £ 2%
200
2
V
4V
500 nA
400 µA
2 mA
20 25 mW
Features
• Two MOSFET's in phaseleg config.
• International standard package
• Direct copper bonded Al2O3 ceramic
base plate
• Isolation voltage 3600 V~
• Low RDS(on) HDMOSTM process
• Low package inductance for high
speed switching
• Kelvin source contact
Applications
• Switched-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
Advantages
• Easy to mount with two screws
• Space and weight savings
• High power density
• Low losses
Data per MOSFET unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
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