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PDF 2SC5839 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5839 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Transistors
2SC5839
Silicon NPN epitaxial planar type
www.DataSheet4U.com
For low-voltage high-frequency amplification
■ Features
• High transition frequency fT
• Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
9
6
2
30
100
125
−55 to +125
Unit
V
V
V
mA
mW
°C
°C
Unit: mm
32
1.00±0.05
1
0.39+−00..0031
0.25±0.05
0.25±0.05
1
32
0.65±0.01
0.05±0.03
Marking Symbol: 1N
1: Base
2: Emitter
3: Collector
ML3-N2 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
Forward transfer gain
Noise figure
Collector output capacitance
(Common base, input open circuited)
Symbol
ICBO
IEBO
hFE
fT
S21e2
NF
Cob
Conditions
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 10 mA
VCE = 3 V, IC = 10 mA, f = 1.5 GHz
VCE = 0.3 V, IC = 1 mA, f = 0.9 GHz
VCE = 0.3 V, IC = 1 mA, f = 0.9 GHz
VCB = 3 V, IE = 0, f = 1 MHz
Min Typ Max Unit
1 µA
1 µA
40 100 160
10 GHz
6.5 dB
1.7 dB
0.4 0.7
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJC00289AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC5839.PDF ] | |
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