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Número de pieza | FDMC7660 | |
Descripción | N-Channel PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDMC7660 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! June 2012
FDMC7660
N-Channel PowerTrench® MOSFET
30 V, 20 A, 2.2 mΩ
Features
General Description
Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A
Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
DC - DC Buck Converters
Point of Load
High Efficiency Load Switch and Low Side Switching
Top Bottom
S Pin 1
S
S
G
S
S
D
D
D
D
D
D
Power 33
S
G
D
D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
40
100
20
200
200
41
2.3
-55 to + 150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3
53
°C/W
Device Marking
FDMC7660
Device
FDMC7660
Package
Power 33
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
1E-3
10-3
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
100
101
100
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
5
www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FDMC7660.PDF ] |
Número de pieza | Descripción | Fabricantes |
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