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PDF FDMC7660S Data sheet ( Hoja de datos )
| Número de pieza | FDMC7660S | |
| Descripción | N-Channel Power Trench SyncFET | |
| Fabricantes | Fairchild Semiconductor | |
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January 2014
FDMC7660S
N-Channel Power Trench® SyncFET™
30 V, 20 A, 2.2 mΩ
Features
Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A
Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 18 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
General Description
The FDMC7660S has been designed to minimize losses in
power conversion applications. Advancements in both silicon
and package technologies have been combined to offer the
lowest rDS(on) while maintaining excellent switching
performance. This device has the added benefit of an efficient
monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Pin 1
S
S
S
G
D
D
D
D
Top
Power 33
Bottom
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
40
100
20
200
128
41
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3
53
°C/W
Device Marking
FDMC7660S
Device
FDMC7660S
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C1
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
10-4
SINGLE PULSE
RθJA = 125 oC/W
10-3
10-2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 1
t, RECTANGULAR PULSE DURATION (sec)
10
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDMC7660S.PDF ] | |
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