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Número de pieza | BLF645 | |
Descripción | Broadband power LDMOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BLF645 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! BLF645
Broadband power LDMOS transistor
Rev. 01 — 27 January 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial
applications. The transistor is suitable for the frequency range HF to 1400 MHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1. Typical performance
RF performance at Th = 25 °C in a common source test circuit.
Mode of operation f
VDS PL
PL(PEP)
(MHz)
(V) (W) (W)
CW, class-AB
1300
32 100 -
2-tone, class-AB
1300
32 -
100
Gp
(dB)
18
18
ηD IMD
(%) (dBc)
56 -
45 −32
1.2 Features
CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
drain current IDq = 0.9 A for total device:
Average output power = 100 W
Power gain = 18 dB
Drain efficiency = 56 %
2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
drain current IDq = 0.9 A for total device:
Peak envelope load power = 100 W
Power gain = 18 dB
Drain efficiency = 45 %
Intermodulation distortion = −32 dBc
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1 page NXP Semiconductors
BLF645www.DataSheet4U.com
Broadband power LDMOS transistor
55
PL
(dBm)
53
51
49
001aal363
ideal PL
(2)
(1)
PL
47
45
27 29 31 33 35 37
Pi (dBm)
VDS = 32 V; IDq = 900 mA (for total device); f = 1300 MHz.
(1) PL(1dB) = 50.5 dBm (112 W).
(2) PL(3dB) = 51.5 dBm (141 W).
Fig 3. Load power as function of input power; typical values
BLF645_1
Product data sheet
Rev. 01 — 27 January 2010
© NXP B.V. 2010. All rights reserved.
5 of 13
5 Page NXP Semiconductors
BLF645www.DataSheet4U.com
Broadband power LDMOS transistor
10. Abbreviations
Table 9. Abbreviations
Acronym
Description
CW Continuous Waveform
DC Direct Current
D-MOS
Diffusion Metal-Oxide Semiconductor
ESD
ElectroStatic Discharge
HF High Frequency
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
SMD
Surface-Mount Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 10. Revision history
Document ID
Release date
BLF645_1
20100127
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
BLF645_1
Product data sheet
Rev. 01 — 27 January 2010
© NXP B.V. 2010. All rights reserved.
11 of 13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet BLF645.PDF ] |
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