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Número de pieza | ECH8901 | |
Descripción | PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ECH8901 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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ECH8901
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SANYO Semiconductors
DATA SHEET
ECH8901
Appllications
• Charger.
PNP Epitaxial Planar Silicon Transistor
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• Composite type, facilitating high-density mounting.
• Mounting height 0.9mm.
• IECO is guaranteed for preventing reverse flow from the collector to the emitter.
• Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
[FET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Marking : LA
Symbol
Conditions
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
VDSS
VGSS
ID
IDP
PW≤10μs, duty cycle≤1%
Ratings
Unit
--30
--30
--5
--3
--6
--600
1.3
150
--55 to +150
V
V
V
A
A
mA
W
°C
°C
--12 V
±10 V
--6 A
--40 A
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
21010EA TK IM TC-00002268 No. A1472-1/6
1 page ECH8901
ID -- VDS
[FET]
--6
--5
--4 VGS= --1.5V
--3
--2
--1
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
100
Drain-Rto-DSoSu(rocenV) ol-t-ageV, GVDSS -- V
IT12947
[FET]
Ta=25°C
90
80
--3.0A
70
--1.5A
60
50
ID= --0.5A
40
30
20
10
0
0 --2 --4 --6
5
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
3 VDS= --6V
2
--8
IT12949
[FET]
10
7
5
3
2
1.0
7
Ta= --25°7C5°C
5
3
2
25°C
0.1
7
5
3
2
0.01
--0.001 2 3
1000
7
5
5 7--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10
Drain
SW
Current,
Time
I-D-
-- A
ID
IT12951
[FET]
VDD= --6V
VGS= --4.5V
3
2
td(off)
100
7 tf
5
3
2
10
7
--0.01
23
tr
td(on)
5 7 --0.1 2 3 5 7 --1.0
Drain Current, ID -- A
23
5 7 --10
IT12953
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
0
80
ID -- wVwGwS.DataSheet4U[.FcEoTm]
VDS= --6V
--0.5
--1.0
--1.5
--2.0
Gate-to-Source Voltage,
RDS(on) --
VTaGS
--
V
--2.5
IT12948
[FET]
70
60
50
VGS= --1.8V, ID= --0.5A
40
30
20
VGS=
VGS=
--2.5V,
--4.5V,
ID=
ID=
--1.5A
--3.0A
10
0
--60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- ∞C IT12950
--10
IS -- VSD
[FET]
7
5
VGS=0V
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
0.001
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-DV--DVS
IT12952
[FET]
3
f=1MHz
2
1000
7
5
3
2
Ciss
Coss
Crss
100
0
--2 --4 --6 --8 --10 --12
Drain-to-Source Voltage, VDS -- V IT12954
No. A1472-5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet ECH8901.PDF ] |
Número de pieza | Descripción | Fabricantes |
ECH8901 | PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET | Sanyo Semicon Device |
ECH8901 | PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET | Sanyo Semicon Device |
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