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Número de pieza | M65609E | |
Descripción | Rad Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM | |
Fabricantes | ATMEL Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de M65609E (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! Features
• Operating Voltage: 3.3V
• Access Time: 40 ns
• Very Low Power Consumption
– Active: 160 mW (Max)
– Standby: 70 µW (Typ)
• Wide Temperature Range: -55°C to +125°C
• MFP 32 leads 400 Mils Width Package
• TTL Compatible Inputs and Outputs
• Asynchronous
• Designed on 0.35µm Process
• No Single Event Latch-up below a LET threshold of 80 MeV/mg/cm2
• Tested up to a Total Dose of 200 Krad (Si) according to MIL STD 883 Method 1019
• Quality grades: QML Q or V with SMD 5962-02501
Description
The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits.
Utilizing an array of six transistors (6T) memory cells, the M65609E combines an
extremely low standby supply current with a fast access time at 40 ns. The high stabil-
ity of the 6T cell provides excellent protection against soft errors due to noise.
The M65609E is processed according to the methods of the latest revision of the MIL
PRF 38535 and ESCC 9000.
It is produced on the same process as the MH1RT sea of gates series.
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Rad Hard
128K x 8
3.3-volt
Very Low Power
CMOS SRAM
M65609E
Rev. 4158I–AERO–07/07
1
1 page DC Parameters
DC Test Conditions
Parameter
IIX (1)
IOZ (1)
VOL (2)
VOH (3)
Description
Input leakage
current
Output leakage
current
Output low voltage
Output high voltage
Minimum
-1
-1
-
2.4
Typical
–
–
–
–
1. Gnd < Vin < VCC, Gnd < Vout < VCC Output Disabled.
2. VCC min. IOL = 4 mA.
3. VCC min. IOH = -2 mA.
Consumption
Symbol
ICCSB (1)
ICCSB1 (2)
ICCOP (3)
Description
Standby supply current
Standby supply current
Dynamic operating
current
65609E-40
1.5
1
45
1. CS1 > VIH or CS2 < VIL and CS1 < VIL.
2. CS1 > VCC - 0.3V or, CS2 < Gnd + 0.3V and CS1 < 0.2V
3. F = 1/TAVAV, IOUT = 0 mA, W = OE = VIH, Vin = Gnd or VCC, VCC max.
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Maximum
1
1
0.4
–
Unit
µA
µA
V
V
Unit
mA
mA
mA
Value
max
max
max
5 M65609E
4158I–AERO–07/07
5 Page Read Cycle nb 1
Read Cycle nb 2
Read Cycle nb 3
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11 M65609E
4158I–AERO–07/07
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet M65609E.PDF ] |
Número de pieza | Descripción | Fabricantes |
M65609E | Rad Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM | ATMEL Corporation |
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