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PDF K4S641632H-UC60 Data sheet ( Hoja de datos )

Número de pieza K4S641632H-UC60
Descripción 64Mb H-die SDRAM Specification 54 TSOP-II
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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No Preview Available ! K4S641632H-UC60 Hoja de datos, Descripción, Manual

SDRAM 64Mb H-die (x4, x8, x16)
CMOS SDRAM
64Mb H-die SDRAM Specification
54 TSOP-II with Pb-Free
(RoHS compliant)
Revision 1.3
August 2004
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.3 August 2004

1 page




K4S641632H-UC60 pdf
SDRAM 64Mb H-die (x4, x8, x16)
FUNCTIONAL BLOCK DIAGRAM
CMOS SDRAM
Data Input Register
CLK
ADD
Bank Select
4M x 4 / 2M x 8 / 1M x 16
4M x 4 / 2M x 8 / 1M x 16
4M x 4 / 2M x 8 / 1M x 16
4M x 4 / 2M x 8 / 1M x 16
Column Decoder
LCKE
LRAS
LCBR
LWE
LCAS
Latency & Burst Length
Programming Register
LWCBR
Timing Register
LWE
LDQM
DQi
LDQM
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.3 August 2004

5 Page





K4S641632H-UC60 arduino
SDRAM 64Mb H-die (x4, x8, x16)
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Parameter
CLK cycle time
CAS latency=3
CAS latency=2
CLK to valid
output delay
CAS latency=3
CAS latency=2
Output data
hold time
CAS latency=3
CAS latency=2
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
CAS latency=3
CAS latency=2
Symbol
tCC
tSAC
tOH
tCH
tCL
tSS
tSH
tSLZ
tSHZ
60
Min Max
6
1000
-
5
-
2.5
-
2.5
2.5
1.5
1
1
5
-
70
Min Max
7
1000
-
6
-
3
-
3
3
2
1
1
6
-
Notes : 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
CMOS SDRAM
75
Min Max
7.5
1000
10
5.4
6
3
3
2.5
2.5
1.5
0.8
1
5.4
6
Unit Note
ns 1
ns 1,2
ns 2
ns 3
ns 3
ns 3
ns 3
ns 2
ns
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Output rise time
Symbol
trh
Condition
Measure in linear
region : 1.2V ~ 1.8V
Min
1.37
Typ
Output fall time
tfh
Measure in linear
region : 1.2V ~ 1.8V
1.30
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
2.8
3.9
Output fall time
tfh
Measure in linear
region : 1.2V ~ 1.8V
2.0
2.9
Notes : 1. Rise time specification based on 0pF + 50 to VSS, use these values to design to.
2. Fall time specification based on 0pF + 50 to VDD, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to VSS.
Max
4.37
3.8
5.6
5.0
Unit
Volts/ns
Volts/ns
Volts/ns
Volts/ns
Notes
3
3
1,2
1,2
Rev. 1.3 August 2004

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