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PDF 2N7002CK Data sheet ( Hoja de datos )
| Número de pieza | 2N7002CK | |
| Descripción | 0.3 A N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 — 11 September 2009
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a
small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features
I Logic-level compatible
I Very fast switching
I Trench MOSFET technology
I ESD protection up to 3 kV
1.3 Applications
I Relay driver
I High-speed line driver
I Low-side loadswitch
I Switching circuits
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
IDM
Quick reference data
Parameter
drain-source voltage
drain current
peak drain current
RDSon
drain-source on-state
resistance
Conditions
single pulse;
tp ≤ 10 µs
VGS = 10 V;
ID = 500 mA
Min Typ Max Unit
- - 60 V
- - 300 mA
- - 1.2 A
- 1.1 1.6 Ω
1 page  
NXP Semiconductors
2N7002CKwww.DataSheet4U.com
60 V, 0.3 A N-channel Trench MOSFET
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics …continued
Parameter
Conditions
thermal resistance from
junction to solder point
Min Typ Max Unit
- - 150 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th)
IDSS
gate-source threshold
voltage
drain leakage current
IGSS gate leakage current
RDSon
drain-source on-state
resistance
Dynamic characteristics
ID = 10 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 250 µA; VDS = VGS;
Tj = 25 °C
VDS = 60 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±20 V; VDS = 0 V
VGS = ±10 V; VDS = 0 V
VGS = ±5 V; VDS = 0 V
VGS = 4.5 V;
ID = 200 mA
Tj = 25 °C
Tj = 150 °C
VGS = 10 V; ID = 500 mA
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
ID = 200 mA;
VDS = 10 V;
VGS = 4.5 V
VGS = 0 V; VDS = 25 V;
f = 1 MHz
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VDS = 15 V;
RL = 15 Ω;
VGS = 10 V;
RG = 6 Ω
VSD
source-drain voltage
IS = 200 mA; VGS = 0 V
Min Typ Max Unit
60 - - V
55 - - V
1 1.75 2.5 V
- - 100 nA
- - 1 µA
- - 5 µA
- 50 450 nA
- - 100 nA
-
1.3 3
Ω
- 2.8 4.4 Ω
- 1.1 1.6 Ω
- 1.09 1.3 nC
- 0.22 - nC
- 0.23 - nC
- 47.2 55 pF
- 11 20 pF
- 5 7.5 pF
- 8 15 ns
- 8 15 ns
- 38 50 ns
- 22 35 ns
0.47 0.79 1.1 V
2N7002CK_1
Product data sheet
Rev. 01 — 11 September 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
10. Revision history
Table 8. Revision history
Document ID
Release date
2N7002CK_1
20090911
Data sheet status
Product data sheet
2N7002CKwww.DataSheet4U.com
60 V, 0.3 A N-channel Trench MOSFET
Change notice
-
Supersedes
-
2N7002CK_1
Product data sheet
Rev. 01 — 11 September 2009
© NXP B.V. 2009. All rights reserved.
11 of 13
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