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PDF K3483 Data sheet ( Hoja de datos )
| Número de pieza | K3483 | |
| Descripción | MOSFET ( Transistor ) - 2SK3483 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
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2SK3483
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3483 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low on-state resistance
RDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A)
RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A)
• Low Ciss: Ciss = 2300 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3483
TO-251 (MP-3)
2SK3483-Z
TO-252 (MP-3Z)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0V)
VDSS
Gate to Source Voltage (VDS = 0V)
VGSS
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
100
±20
±28
±60
40
1.0
150
–55 to +150
25
62.5
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15068EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2001
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
120
Pulsed
100
80
VGS = 4.5 V
60
10 V
40
20
0
-50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
VDD = 50 V
VGS = 10 V
RG = 0 Ω
100
td(off)
td(on)
10
tr
tf
1
0.1
1 10
ID - Drain Current - A
100
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
P u ls e d
100
10
VGS = 10 V
1
0V
0.1
0.01
0.0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
2SK3483
10000
1000
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CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
f = 1MHz
C iss
C oss
100
C rss
10
0.01
0.1 1
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
90 ID = 28 A
10
80 VDD = 80 V
50 V
8
70 20 V
VGS
60 6
50
40 4
30
20
VDS
10
2
00
0 5 10 15 20 25 30 35 40 45 50
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs. DRAIN CURRENT
1000
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1 10
IF - Drain Current - A
100
Data Sheet D15068EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3483.PDF ] | |
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