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PDF TIM5964-80SL Data sheet ( Hoja de datos )

Número de pieza TIM5964-80SL
Descripción MICROWAVE POWER GaAs FET
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! TIM5964-80SL Hoja de datos, Descripción, Manual

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWERwGwwa.ADastaFShEeTet4U.com
TIM5964-80SL
FEATURES
„ LOW INTERMODULATION DISTORTION
IM3=-30 dBc at Pout= 42.0dBm
Single Carrier Level
„ HIGH POWER
P1dB=49.0dBm at 5.9GHz to 6.4GHz
„ HIGH GAIN
G1dB=7.0dB at 5.9GHz to 6.4GHz
„ BROAD BAND INTERNALLY MATCHED FET
„ HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS
UNIT
Output Power at 1dB Gain
Compression Point
P1dB
dBm
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
G1dB
IDS1
ΔG
ηadd
VDS= 10V
IDSset10.0A
f = 5.9 to 6.4GHz
dB
A
dB
%
3rd Order Intermodulation
Distortion
IM3
Two-Tone Test
Po=42.0dBm
dBc
Drain Current
IDS2
(Single Carrier Level)
Channel Temperature Rise
ΔTch
(VDS X IDS +Pin-P1dB)
X Rth(c-c)
Recommended Gate Resistance(Rg) : 28 Ω (Max.)
A
°C
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS
UNIT
Transconductance
Pinch-off Voltage
Saturated Drain Current
gm
VGSoff
IDSS
VDS= 3V
IDS= 12.0A
VDS= 3V
IDS= 200mA
VDS= 3V
VGS= 0V
S
V
A
Gate-Source Breakdown
Voltage
Thermal Resistance
VGSO IGS= -1.0mA
Rth(c-c) Channel to Case
V
°C/W
MIN.
48.0
6.0
-25
MIN.
-1.0
-5
TYP. MAX.
49.0
7.0
18.0
35
-30
20.0
±0.8
16.0
100
TYP. MAX.
20
-1.8 -3.0
38
⎯⎯
0.5 0.6
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Dec. 2008

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