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PDF STU40N2LH5 Data sheet ( Hoja de datos )

Número de pieza STU40N2LH5
Descripción N-channel Power MOSFET
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! STU40N2LH5 Hoja de datos, Descripción, Manual

Features
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STD40N2LH5
STU40N2LH5
N-channel 25 V, 0.01 , 40 A, DPAK, IPAK
STripFET™ V Power MOSFET
Preliminary Data
Type
STD40N2LH5
STU40N2LH5
VDSS
25 V
25 V
RDS(on) max
0.012
0.0126
ID
40 A
40 A
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications
Description
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available RDS(on)*Qg, in the standard
packages, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
3
1
DPAK
3
2
1
IPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD40N2LH5
STU40N2LH5
Marking
40N2LH5
40N2LH5
Package
DPAK
IPAK
Packaging
Tape and reel
Tube
September 2008
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/12
www.st.com
12

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STU40N2LH5 pdf
STD40N2LH5 - STU40N2LH5
3 Test circuits
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Figure 2. Switching times test circuit for
resistive load
Figure 3. Gate charge test circuit
Figure 4. Test circuit for inductive load
Figure 5. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 6. Unclamped inductive waveform
Figure 7. Switching time waveform
5/12

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STU40N2LH5 arduino
STD40N2LH5 - STU40N2LH5
6 Revision history
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Table 8. Document revision history
Date
Revision
Changes
24-Jul-2008
23-Sep-2008
1 Initial release
2 VGS value has been changed on Table 2 and Table 5
11/12

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