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Número de pieza | FKP252 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Sanken electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FKP252 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! MOSFET
FKP252
www.DataSheet4U.com
December. 2005
■Features
• Low on-resistance
• Low input capacitance
• Avalanche energy capability guaranteed
■Applications
• PDP driving
• High speed switching
■Equivalent circuit
D (2)
G (1)
■Package---TO220F
S (3)
Absolute maximum ratings
(Ta=25°C)
Characteristic
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
250 V
Gate to Source Voltage
VGSS
±30 V
Continuous Drain Current
ID
±25A
A
Pulsed Drain Current
ID(pulse) *1
±100A
A
Maximum Power Dissipation
PD
40 (Tc=25°C)
W
Single Pulse Avalanche Energy
EAS *2
200 mJ
Avalanche Current IAS 25 A
Channel Temperature Tch 150 °C
Storage Temperature
Tstg -55 to 150
*1 PW≤100μsec, duty cycle≤1%
*2 VDD=20V, L=590μH, ILp=25A, unclamped, RG=50Ω, See Fig.1
°C
.
Sanken Electric Co.,Ltd.
http://www.sanken-ele.co.jp/en/
T02-003EA-051206
1/9
1 page MOSFET
FKP252
www.DataSheet4U.com
December. 2005
Fig.1
Unclamped Inductive Test Method (for Avalanche energy capability)
L
EAS=
1
2
•L•ILP2•
V(BR)DSS
V(BR)DSS − VDD
VGS
0V
IL
VDS
RG
VDD
ILp
IL
V(BR)DSS
VDS
VDD
(a) Test Circuit
(b) Waveforms
Fig.2 Switching Time Test Method
RG
VGS
0V
P.W.=10μs
Duty cycle≦1%
RL
ID
VDS
VDD
(a) Test Circuit
VDD≈120V
ID=12A
RL=10Ω
VGS=10V
RG=5Ω
VGS
VDS
td(on)
ton
tr
90%
10%
90%
td(off)
tf
toff
10%
(b) Output waveforms
Sanken Electric Co.,Ltd.
5/9
T02-003EA-051206
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet FKP252.PDF ] |
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