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PDF 2SC5863 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5863 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Transistors
2SC5863
Silicon NPN epitaxial planar type
For general amplification
■ Features
• High collector-emitter voltage (Base open) VCEO
• High transition frequency fT
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
300
300
7
70
100
200
150
−55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
www.DataSheet4U.com
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: 7H
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
VCEO
VEBO
ICEO
hFE
VCE(sat)
Cob
IC = 100 µA, IB = 0
IE = 1 µA, IC = 0
VCE = 120 V, IB = 0
VCE = 10 V, IC = 5 mA
IC = 50 mA, IB = 5 mA
VCB = 10 V, IE = 0, f = 1 MHz
300
7
60
V
V
1 µA
220
1.2 V
10 pF
Transition frequency
fT VCB = 10 V, IE = −10 mA, f = 200 MHz 50 80
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
60 to 150
100 to 220
Publication date: November 2002
SJC00290AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC5863.PDF ] | |
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