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PDF KFG1216U2M Data sheet ( Hoja de datos )

Número de pieza KFG1216U2M
Descripción FLASH MEMORY
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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No Preview Available ! KFG1216U2M Hoja de datos, Descripción, Manual

OneNAND512/OneNAND1GDDP
FLASH MEMORY
Density
512Mb
1Gb
OneNAND SPECIFICATION
Part No.
KFG1216Q2M-DEB
KFG1216D2M-DEB
KFG1216U2M-DIB
KFH1G16Q2M-DEB
VCC(core & IO)
1.8V(1.7V~1.95V)
2.65V(2.4V~2.9V)
3.3V(2.7V~3.6V)
1.8V(1.7V~1.95V)
Temperature
Extended
Extended
Industrial
Extended
PKG
63FBGA(LF)
63FBGA(LF)
63FBGA(LF)
N/A
www.DataSheet4U.com
Version: Ver. 1.4
Date: June 15th, 2005
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1 page




KFG1216U2M pdf
OneNAND512/OneNAND1GDDP
FLASH MEMORY
Document Title
OneNAND
Revision History
Revision No. History
1.3 1. Deleted Manufacturer ID for ES
2. Excluded bit error case in Load operation
3. Revised tWEA value from max to min
4. Revised tRD1 typical value from 35us to 40us
5. Revised tRD2 typical value from 75us to 85us
6. Added technical note for OneNAND boot sequence
7. Revised Asycnchronous Read timing diagram for CE don’t care mode
8. Revised Asynchronous Write timing diagram for CE don’t care mode
9. Revised Load operation timing diagram for CE don’t care mode
Draft Date
Dec. 16, 2004
1.4
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1. Added Copyright Notice in the beginning
Jun. 15, 2005
2. Corrected Errata
3. Updated Icc2, Icc4, Icc5, Icc6 and ISB
4. Revised INT pin description
5. Changed default of Manufacturer ID Register with 00ECh
6. Removed "or erase case, refer to the table 3" from descriptions of WB, EB
7. Added OTP erase case NOTE
8. Revised case definitions of Interrupt Status Register
9. Added a NOTE to Command register
10. Added ECClogSector Information table
11. Removed ’data unit based data handling’ from description of Device
Operation
12. Revised description on Warm/Hot/NAND Flash Core Reset
13. Revised Warm Reset Timing
14. Revised description for 4-, 8-, 16-, 32-Word Linear Burst Mode
15. Revised OTP operation description
16. Restored earlier text for OTP Programming
17. Added supplemental explanation for ECC Operation
18. Replaced "read" with "load" in ECC bypass
19. Removed redundant sentance from ECC Bypass Operation
20. Added technical note for INT pin connection guide
Remark
Final
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
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KFG1216U2M arduino
OneNAND512/OneNAND1GDDP
5. BLOCK DIAGRAM
DQ15~DQ0
A15~A0
CLK
CE
OE
WE
RP
AVD
INT
RDY
BufferRAM
BootRAM
DataRAM
Bootloader
StateMachine
Internal Registers
(Address/Command/Configuration
/Status Registers)
Error
Correction
Logic
- Host Interface
- BufferRAM(BootRAM, DataRAM)
- Command and status registers
- State Machine (Bootloader is included)
- Error Correction Logic
- Memory(NAND Flash Array, OTP)
NOTE:
1) At cold reset, bootloader copies boot code(1K byte size) from NAND Flash Array to BootRAM.
www.DataSheet4U.com
Figure 1. Internal Block Diagram
FLASH MEMORY
NAND Flash
Array
OTP
(One Block)
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