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PDF BLF881S Data sheet ( Hoja de datos )
| Número de pieza | BLF881S | |
| Descripción | UHF Power LDMOS Transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF881; BLF881S
UHF power LDMOS transistor
Rev. 01 — 10 December 2009
Preliminary data sheet
1. Product profile
1.1 General description
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.
Table 1. Typical performance
RF performance at VDS = 50 V in a common-source 860 MHz test circuit.
Mode of operation f
PL PL(PEP) PL(AV) Gp
ηD
IMD3
IMDshldr
(MHz)
(W) (W)
(W) (dB) (%) (dBc) (dBc)
2-tone, class AB
f1 = 860; f2 = 860.1 - 140
-
21 49 −34 -
DVB-T (8k OFDM) 858
--
33 21 34 -
−33[1]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
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2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 0.5 A:
Peak envelope power load power = 140 W
Power gain = 21 dB
Drain efficiency = 49 %
Third order intermodulation distortion = −34 dBc
DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 0.5 A:
Average output power = 33 W
Power gain = 21 dB
Drain efficiency = 34 %
Shoulder distance = −33 dBc (4.3 MHz from center frequency)
Integrated ESD protection
Excellent ruggedness
High power gain
1 page  
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
7. Application information
7.1 Narrowband RF figures
7.1.1 CW
23
Gp
(dB)
22
Gp
001aal075 70
D
(%)
60
21 50
20
D
19
40
30
18 20
17 10
16
0
0
40 80 120 160 200
PL (W)
VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit.
Fig 2. CW power gain and drain efficiency as function of load power; typical values
7.1.2 2-Tone
23
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(dB)
22
Gp
21
20
D
19
18
0001aal076
70
D
(%)
60
50
40
30
20
0
IMD3
(dBc)
−20
−40
001aal077
17 10
16
0
0
40 80 120 160
PL(AV) (W)
−60
0
40 80 120 160
PL(AV) (W)
Fig 3.
VDS = 50 V; IDq = 0.5 A; measured in a common-source
narrowband 860 MHz test circuit.
2-Tone power gain and drain efficiency as
function of average load power; typical values
Fig 4.
VDS = 50 V; IDq = 0.5 A; measured in a common-source
narrowband 860 MHz test circuit.
2-Tone third order intermodulation distortion
as a function of average load power; typical
values
BLF881_BLF881S_1
Preliminary data sheet
Rev. 01 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
5 of 17
5 Page 
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
76.2 mm
www.DataSheet4U.com
40 mm
40 mm
Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier
001aaj289
BLF881_BLF881S_1
Preliminary data sheet
Rev. 01 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
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