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PDF BLL6H1214L-250 Data sheet ( Hoja de datos )

Número de pieza BLL6H1214L-250
Descripción LDMOS L-band Radar Power Transistor
Fabricantes NXP Semiconductors 
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BLL6H1214L-250;
BLL6H1214LS-250
LDMOS L-band radar power transistor
Rev. 01 — 11 December 2009
Objective data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1. Test information
Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
VDS PL
Gp ηD
tr
tf
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
1.2 to 1.4 50 250
17 55 15
5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
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„ Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %:
‹ Output power = 250 W
‹ Power gain = 17 dB
‹ Efficiency = 55 %
„ Easy power control
„ Integrated ESD protection
„ High flexibility with respect to pulse formats
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (1.2 GHz to 1.4 GHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

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BLL6H1214L-250 pdf
NXP Semiconductors
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
70
D
(%)
60
001aal167
50
(1)
(3)
40 (2)
30
20
10
0
0 50 100 150 200 250 300 350
PL (W)
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 4. Drain efficiency as a function of load power;
typical values
20
RLin
(dB)
16
20
Gp
(dB)
18
16
D
Gp
001aal168 60
D
(%)
50
40
14 30
12 20
10
1175
1225
1275
1325
10
1375 1425
f (MHz)
PL = 250 W; VDS = 50 V; tp = 500 μs; δ = 20 %;
IDq = 100 mA.
Fig 5. Power gain and drain efficiency as function of
frequency; typical values
001aal169
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12
8
4
0
1175
1225
1275
1325
1375 1425
f (MHz)
PL = 250 W; VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 100 mA.
Fig 6. Input return loss as a function of frequency; typical value
BLL6H1214L-250_1214LS-250_1
Objective data sheet
Rev. 01 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
5 of 11

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BLL6H1214L-250 arduino
NXP Semiconductors
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.1 Ruggedness in class-AB operation . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 4
7.1 Impedance information . . . . . . . . . . . . . . . . . . . 4
7.2 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 4
7.3 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 6
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
11.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Contact information. . . . . . . . . . . . . . . . . . . . . 10
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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BLL6H1214L(S)-250
LDMOS L-band radar power transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 December 2009
Document identifier: BLL6H1214L-250_1214LS-250_1

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