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Número de pieza | BLL6H1214L-250 | |
Descripción | LDMOS L-band Radar Power Transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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BLL6H1214LS-250
LDMOS L-band radar power transistor
Rev. 01 — 11 December 2009
Objective data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1. Test information
Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
VDS PL
Gp ηD
tr
tf
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
1.2 to 1.4 50 250
17 55 15
5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
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Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %:
Output power = 250 W
Power gain = 17 dB
Efficiency = 55 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1 page NXP Semiconductors
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
70
D
(%)
60
001aal167
50
(1)
(3)
40 (2)
30
20
10
0
0 50 100 150 200 250 300 350
PL (W)
VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 4. Drain efficiency as a function of load power;
typical values
20
RLin
(dB)
16
20
Gp
(dB)
18
16
D
Gp
001aal168 60
D
(%)
50
40
14 30
12 20
10
1175
1225
1275
1325
10
1375 1425
f (MHz)
PL = 250 W; VDS = 50 V; tp = 500 μs; δ = 20 %;
IDq = 100 mA.
Fig 5. Power gain and drain efficiency as function of
frequency; typical values
001aal169
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12
8
4
0
1175
1225
1275
1325
1375 1425
f (MHz)
PL = 250 W; VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 100 mA.
Fig 6. Input return loss as a function of frequency; typical value
BLL6H1214L-250_1214LS-250_1
Objective data sheet
Rev. 01 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
5 of 11
5 Page NXP Semiconductors
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.1 Ruggedness in class-AB operation . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 4
7.1 Impedance information . . . . . . . . . . . . . . . . . . . 4
7.2 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 4
7.3 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 6
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
11.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Contact information. . . . . . . . . . . . . . . . . . . . . 10
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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BLL6H1214L(S)-250
LDMOS L-band radar power transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 December 2009
Document identifier: BLL6H1214L-250_1214LS-250_1
11 Page |
Páginas | Total 11 Páginas | |
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Número de pieza | Descripción | Fabricantes |
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