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PDF K3255 Data sheet ( Hoja de datos )
| Número de pieza | K3255 | |
| Descripción | MOSFET ( Transistor ) - 2SK3255 | |
| Fabricantes | Sanyo | |
| Logotipo |  |
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2SK3255
N- Channel MOS Silicon FET
Very High-Speed Switching Applications
Features and Applications
• Low ON-state resistance.
• Low Qg.
TENTATIVE
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
*) : Chip Performance Shown
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
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Diode Forward Voltage
VDSS
VGSS
ID*
IDP
PD
Tch
Tstg
(TC=25°C)
900
±30
5
15
35
150
--55 to ±150
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
ID=1mA , VGS=0
VDS=900V , VGS=0
VGS=±30V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=2.5A
ID=2.5A , VGS=10V
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=200V , ID=2.5A
VGS=20V
See Specified Test
Circuit
IS=2.5A , VGS = 0
min
900
2.5
2.4
(Note) Be careful in handling the2SK3255 because it has no protection diode between gate and source.
unit
V
V
A
A
W
°C
°C
typ
4.0
2.1
1100
115
28
44
21
43
160
47
max
250
±100
3.5
2.8
1.5
Switching Time Test Circuit
VDD=200V
Package Dimensions
φ 3.2
10.0
TO-220FI(LS)(unit:mm)
4.5
2.8
unit
V
µA
nA
V
S
Ω
pF
pF
pF
nC
ns
ns
ns
ns
V
PW=1µS
D.C.≤0.5%
VGS=10V
ID=2.5A
RL=80Ω
D VOUT
G
2SK3255
RGS
P.G 50Ω
S
0.9 1.2
0.75
123
2.55 2.55
1.2
0.7
1 : Gate
2 : Drain
3 : Source
Specifications and information herin are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
990118TM2fXHD
1 page | ||
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| PDF Descargar | [ Datasheet K3255.PDF ] | |
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