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PDF 1N3290 Data sheet ( Hoja de datos )
| Número de pieza | 1N3290 | |
| Descripción | (1N3288 - 1N3297) SILICON POWER DIODE | |
| Fabricantes | NAINA SEMICONDUCTOR | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1N3290 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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1N3288-1N3297
SILICON POWER DIODE
NAINA
DO - 8
FEATURES
• Diffused Series
• Available in Normal & Reverse Polarity
• Industrial Grade
• Available In Avalanche Characteristic
ELECTRICAL SPECIFICATIONS
IF
Maximum Average Forward
Current Te=1250C
VFM Maximum peak forward
voltage drop @ Rated IF(AV)
IFSM
Maximum peak one cycle
(non-rep) surge current 10 m sec
IFRM
Maximum peak repetitive
surge current
I2t Maximum I2t rating (non-rep.) for
5 to 10 msec.
100A
1.5V
2200A
500 A
24000 A2 Sec
THERMALMECHANICAL SPECIFICATIONS
θJC
Tj
Tstg
W
www.DataSheet4U.com
Maximum thermal resistance Junction to case
Operating Junction Temp.
Storage temperature
Mounting torque
(Non-lubricated threads)
Approx, weight
ELECTRICAL RATINGS
0.400C/W
-650C to 1500C
-650C to 2000C
2.0 M-kg min,
3.0 M-kg max
150 gms.
TYPE
VRRM
Max. repetitive peak reverse
voltage (v)
1N32881N3289 1N32901N3291 1N3292 1N3293 1N32941N3295IN3296
100 200 300 400 500 600 800 1000 1200
VR(RMS) Max. R.M.S. reverse voltage(V) 70 140 210 280 350 420 560 700 840
VR
IR(AV)
Max. D.C. Blocking Voltage (V) 100 200 300 400 500 600 800 1000 1200
Recommended R.M.S. working 40 80 120 160 200 240
Voltage(v)
Max. Average reverse leakage 200 200 200 200
current @ VRRM Tc 250C (uA)
200 200
NAINA SEMICONDUCTOR LTD.,
D-95 ,SECTOR -63 NOIDA(INDIA)
e-mail:[email protected], web site: www.nainasemi.com
320 400 480
200 200 200
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 1N3290.PDF ] | |
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