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Número de pieza | PBSS304NX | |
Descripción | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PBSS304NX (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
No Preview Available ! PBSS304NX
60 V, 4.7 A NPN low VCEsat (BISS) transistor
Rev. 02 — 20 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS304PX.
1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
www.DataSheet4U.com
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
collector-emitter voltage open base
- - 60 V
IC collector current
- - 4.7 A
ICM
RCEsat
peak collector current
collector-emitter saturation
resistance
single pulse;
tp ≤ 1 ms
IC = 4 A;
IB = 200 mA
-
[1] -
- 9.4 A
37 53 mΩ
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
1 page NXP Semiconductors
PBSS304NX
60 V, 4.7 A NPN low VCEsat (BISS) transistor
102
Zth(j-a)
(K/W)
10
δ=1
0.75
0.50 0.33
0.20
0.10
0.05
0.02
0.01
1
0
006aaa558
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
Zth(j-a)
(K/W)
10
δ=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
1 0.01
www.DataSheet4U.co0m
006aaa559
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS304NX_2
Product data sheet
Rev. 02 — 20 November 2009
© NXP B.V. 2009. All rights reserved.
5 of 15
5 Page NXP Semiconductors
11. Soldering
PBSS304NX
60 V, 4.7 A NPN low VCEsat (BISS) transistor
www.DataSheet4U.com
0.85 0.20
1.20
4.60
1.20
4.75
2.25
2.00
1.90
1.20
1.70
0.50
4.85
1.20
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
1.00
(3x)
32 1
3.70
3.95
0.60 (3x)
0.70 (3x)
SOT89 standard mounting conditions for reflow soldering
Fig 16. Reflow soldering footprint
6.60
2.40
msa442
2 3.50
0.50
7.60
solder lands
3
1 1.20
solder resist
3.00 occupied area
Dimensions in mm
1.50
0.70
5.30
Not recommended for wave soldering
Fig 17. Wave soldering footprint
preferred transport direction during soldering
msa423
PBSS304NX_2
Product data sheet
Rev. 02 — 20 November 2009
© NXP B.V. 2009. All rights reserved.
11 of 15
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet PBSS304NX.PDF ] |
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