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PDF PBSS304NX Data sheet ( Hoja de datos )

Número de pieza PBSS304NX
Descripción NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! PBSS304NX Hoja de datos, Descripción, Manual

PBSS304NX
60 V, 4.7 A NPN low VCEsat (BISS) transistor
Rev. 02 — 20 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS304PX.
1.2 Features
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ High-voltage DC-to-DC conversion
„ High-voltage MOSFET gate driving
„ High-voltage motor control
„ High-voltage power switches (e.g. motors, fans)
„ Automotive applications
1.4 Quick reference data
www.DataSheet4U.com
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
collector-emitter voltage open base
- - 60 V
IC collector current
- - 4.7 A
ICM
RCEsat
peak collector current
collector-emitter saturation
resistance
single pulse;
tp 1 ms
IC = 4 A;
IB = 200 mA
-
[1] -
- 9.4 A
37 53 mΩ
[1] Pulse test: tp 300 μs; δ ≤ 0.02.

1 page




PBSS304NX pdf
NXP Semiconductors
PBSS304NX
60 V, 4.7 A NPN low VCEsat (BISS) transistor
102
Zth(j-a)
(K/W)
10
δ=1
0.75
0.50 0.33
0.20
0.10
0.05
0.02
0.01
1
0
006aaa558
101
105
104
103
102
101
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
Zth(j-a)
(K/W)
10
δ=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
1 0.01
www.DataSheet4U.co0m
006aaa559
101
105
104
103
102
101
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS304NX_2
Product data sheet
Rev. 02 — 20 November 2009
© NXP B.V. 2009. All rights reserved.
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PBSS304NX arduino
NXP Semiconductors
11. Soldering
PBSS304NX
60 V, 4.7 A NPN low VCEsat (BISS) transistor
www.DataSheet4U.com
0.85 0.20
1.20
4.60
1.20
4.75
2.25
2.00
1.90
1.20
1.70
0.50
4.85
1.20
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
1.00
(3x)
32 1
3.70
3.95
0.60 (3x)
0.70 (3x)
SOT89 standard mounting conditions for reflow soldering
Fig 16. Reflow soldering footprint
6.60
2.40
msa442
2 3.50
0.50
7.60
solder lands
3
1 1.20
solder resist
3.00 occupied area
Dimensions in mm
1.50
0.70
5.30
Not recommended for wave soldering
Fig 17. Wave soldering footprint
preferred transport direction during soldering
msa423
PBSS304NX_2
Product data sheet
Rev. 02 — 20 November 2009
© NXP B.V. 2009. All rights reserved.
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