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PDF K3607-01MR Data sheet ( Hoja de datos )
| Número de pieza | K3607-01MR | |
| Descripción | MOSFET ( Transistor ) - 2SK3607-01MR | |
| Fabricantes | Fuji | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K3607-01MR (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2SK3607-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
VDS
Ratings
200
Unit
V
VDSX *5
170 V
Continuous drain current
Pulsed drain current
ID
ID(puls]
±13 A
±52 A Equivalent circuit schematic
Gate-source voltage
VGS
±30 V
Non-repetitive Avalanche current IAS *2
Maximum Avalanche Energy
EAS *1
13 A
175 mJ
Drain(D)
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Ta=25°C
Tc=25°C
5
2.16
25
kV/µs
W
Gate(G)
Operating and storage
temperature range
Isolation voltage
Tch
Tstg
VISO *6
+150
-55 to +150
2
°C
°C
kVrms
Source(S)
*1
*4
LV=D1S.6<=5m20H0, VVcc=*548VVGS=*2-3T0cVh<=1*560°tC=60*s3ecIF<=f=-6ID0,H-dz i/dt=50A/µs,
Vcc <=
BVDSS,
Tch <=
150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
www.DataSheet4U.com
Item
Symbol
Test Conditions
Drain-source breakdown voltaget
V(BR)DSS
ID= 250µA VGS=0V
Gate threshold voltage
VGS(th)
ID= 250µA VDS=VGS
Min. Typ.
200
3.0
Max. Units
V
5.0 V
Zero gate voltage drain current
Gate-source leakage current
IDSS
IGSS
VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
25
250
10 100
µA
nA
Drain-source on-state resistance
RDS(on)
ID=6.5A VGS=10V
131 170
mΩ
Forward transcondutance
Input capacitance
gfs ID=6.5A VDS=25V
Ciss VDS=75V
5.5 11
770
1155
S
pF
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Coss
Crss
td(on)
tr
VGS=0V
f=1MHz
VCC=48V ID=6.5A
VGS=10V
110
5
12
2.6
165
7.5
18
3.9
ns
Turn-off time toff
td(off)
tf
RGS=10 Ω
22
6.1
33
9.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
QG
QGS
QGD
IAV
VSD
trr
Qrr
VCC=100V
ID=13A
VGS=10V
L=100µH Tch=25°C
IF=13A VGS=0V Tch=25°C
IF=13A VGS=0V
-di/dt=100A/µs Tch=25°C
21 31.5 nC
8 12
5 7.5
13 A
1.10 1.65 V
0.15 µs
0.88 µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max.
5.0
58.0
Units
°C/W
°C/W
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet K3607-01MR.PDF ] | |
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