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PDF IKW25N120T2 Data sheet ( Hoja de datos )

Número de pieza IKW25N120T2
Descripción IGBT
Fabricantes Infineon Technologies 
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No Preview Available ! IKW25N120T2 Hoja de datos, Descripción, Manual

IKW25N120T2
TrenchStop® 2nd generation Series
Low Loss DuoPack : IGBT in 2nd generation TrenchStop®
with soft, fast recovery anti-parallel Emitter Controlled Diode
C
Short circuit withstand time 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® 2nd generation for 1200 V applications offers :
G
E
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Easy paralleling capability due to positive temperature coefficient
in VCE(sat)
Low EMI
PG-TO-247-3
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE Diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW25N120T2 1200V 25A
1.7V
175C K25T1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current (Tj=150°C)
TC = 25C
TC = 110C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 175C
Diode forward current (Tj=150°C)
TC = 25C
TC = 110C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 600V, Tj, start 175C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Wavesoldering only, temperature on leads only
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1200
50
25
100
100
40
25
100
20
10
349
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.2 12.06.2013

1 page




IKW25N120T2 pdf
IKW25N120T2
TrenchStop® 2nd generation Series
100A
80A
60A
TC=80°C
TC=110°C
40A
Ic
20A Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 12)
100A
10A
1A
t =3µs
p
10µs
50µs
150µs
500µs
20ms
DC
0.1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C,
Tj 175C;VGE=15V)
350W
300W
250W
200W
150W
100W
50W
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Maximum power dissipation as a
function of case temperature
(Tj 175C)
50A
40A
30A
20A
10A
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Maximum collector current as a
function of case temperature
(VGE 15V, Tj 175C)
IFAG IPC TD VLS
5
Rev. 2.2 12.06.2013

5 Page





IKW25N120T2 arduino
IKW25N120T2
TrenchStop® 2nd generation Series
600ns
500ns
400ns
300ns
200ns
100ns
TJ=175°C
T =25°C
J
4µC
3µC
2µC
1µC
TJ=175°C
TJ=25°C
0ns
400A/µs 800A/µs 1200A/µs 1600A/µs 2000A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=600V, IF=25A,
Dynamic test circuit in Figure E)
0µC
400A/µs 800A/µs 1200A/µs 1600A/µs 2000A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR=600V, IF=25A,
Dynamic test circuit in Figure E)
35A TJ=175°C
30A -1200A/µs
25A TJ=25°C
20A -800A/µs
15A
10A -400A/µs
T =25°C
J
TJ=175°C
5A
0A
400A/µs 800A/µs 1200A/µs 1600A/µs 2000A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR=600V, IF=25A,
Dynamic test circuit in Figure E)
-0A/µs
400A/µs 800A/µs 1200A/µs 1600A/µs 2000A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=600V, IF=25A,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
11
Rev. 2.2 12.06.2013

11 Page







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