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PDF 2508DX Data sheet ( Hoja de datos )
| Número de pieza | 2508DX | |
| Descripción | BU2508DX | |
| Fabricantes | NXP Semiconductors | |
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Hay una vista previa y un enlace de descarga de 2508DX (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2508DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 4.5 A; IB = 1.12 A
IF = 4.5 A
ICsat = 4.5 A; IB(end) = 1.1 A
TYP.
-
-
-
-
-
-
4.5
1.6
0.4
MAX.
1500
700
8
15
45
1.0
-
2.0
0.6
UNIT
V
V
A
A
W
V
A
V
µs
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN DESCRIPTION
1 base
case
c
2 collector
3 emitter
case isolated
123
b
Rbe
e
www.DataSheet4U.com
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
700
8
15
4
6
100
5
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
1 Turn-off current.
July 1998
1
Rev 2.500
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2508DX
IC / A
100
ICM max
10 IC max
= 0.01
II
tp =
10 us
Ptot max
1
100 us
IC / A
100
ICM max
10 IC max
= 0.01
II
tp =
10 us
Ptot max
1
100 us
I
0.1
1 ms
10 ms
DC
I
0.1
1 ms
10 ms
DC
0.01
1
10 100 1000
VCE / V
Fig.13. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
www.DataSIhIeetE4Ux.tceonmsion for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
0.01
1
10 100 1000
VCE / V
Fig.14. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
July 1998
5 Rev 2.500
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2508DX.PDF ] | |
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