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PDF 18N120BN Data sheet ( Hoja de datos )
| Número de pieza | 18N120BN | |
| Descripción | HGTG18N120BN | |
| Fabricantes | Fairchild Semiconductor | |
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Data Sheet
HGTG18N120BN
December 2001
54A, 1200V, NPT Series N-Channel IGBT
The HGTG18N120BN is a Non-Punch Through (NPT) IGBT
design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49288.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG18N120BN
TO-247
G18N120BN
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 54A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E
C
G
G
www.DataSheet4U.com
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG18N120BN Rev. B
1 page  
HGTG18N120BN
Typical Performance Curves Unless Otherwise Specified (Continued)
350
RG = 3Ω, L = 1mH, VCE = 960V
300
VGE = 12V, VGE = 15V, TJ = 150oC
250
200
150
100
5
VGE = 12V, VGE = 15V, TJ = 25oC
10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
250
RG = 3Ω, L = 1mH, VCE = 960V
225
200
175 TJ = 150oC, VGE = 12V OR 15V
150
125
100
75 TJ = 25oC, VGE = 12V OR 15V
50
25
5
10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
40
200
DUTY CYCLE < 0.5%, VCE = 20V
PULSE DURATION = 250µs
150
100
TC = 25oC
50
TC = 150oC
TC = -55oC
0
6 7 8 9 10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
www.DataSheet4U.com
FIGURE 13. TRANSFER CHARACTERISTIC
15
6
FREQUENCY = 1MHz
5
CIES
4
3
2
CRES
1
COES
0
0 5 10 15 20 25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
©2001 Fairchild Semiconductor Corporation
20 IG(REF) = 2mA, RL = 33.3Ω, TC = 25oC
15 VCE = 1200V VCE = 800V
10
VCE = 400V
5
0
0 50 100 150
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
200
30
DUTY CYCLE < 0.5%, TC = 110oC
25 PULSE DURATION = 250µs
VGE = 15V OR 12V
20
VGE = 10V
15
10
5
0
012345
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
HGTG18N120BN Rev. B
5 Page | ||
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| PDF Descargar | [ Datasheet 18N120BN.PDF ] | |
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