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STB75NF75
STP75NF75 - STP75NF75FP
N-channel 75V - 0.0095Ω - 80A - TO-220 - TO-220FP - D2PAK
STripFET™ II Power MOSFET
General features
Type
STB75NF75
STP75NF75
STP75NF75FP
VDSS
75V
75V
75V
RDS(on)
<0.011Ω
<0.011Ω
<0.011Ω
ID
80A(1)
80A(1)
80A(1)
1. Current limited by package
■ Exceptional dv/dt capability
■ 100% avalanche tested
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Applications
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■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
Internal schematic diagram
Order codes
Part number
STB75NF75T4
STP75NF75
STP75NF75FP
February 2007
Marking
B75NF75
P75NF75
P75NF75
Rev 8
Package
D²PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
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16
STB75NF75 - STP75NF75 - STP75NF75FP
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD= 37.5V, ID= 45A,
RG=4.7Ω, VGS=10V
Figure 15 on page 9
Min. Typ. Max. Unit
25 ns
100 ns
66 ns
30 ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80A, VGS = 0
ISD = 80A,
di/dt = 100A/µs,
VDD = 25V, TJ = 150°C
Figure 17 on page 9
80 A
320 A
1.5 V
132 ns
660 nC
10 A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
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