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Número de pieza | FDP3205 | |
Descripción | N-Channel PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDP3205 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! May 2008
FDP3205
N-Channel PowerTrench® MOSFET
55V, 100A, 7.5mΩ
Features
• RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A
• High performance trench technology for extermly low RDS(on)
• High power and current handing capability
• RoHS compliant
Description
• This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain superior switching performance.
D
GDS
TO-220
FDP Series
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
www.DataSheeSty4mU.bcoolm
Parameter
VDSS
VGSS
ID
IDM
EAS
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
- Pulsed
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
S
Ratings
55
±20
100
390
365
150
1.0
-55 to +175
Ratings
1.0
62.5
Units
V
V
A
A
mJ
W
W/oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
FDP3205 Rev. A
1
www.fairchildsemi.com
1 page Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
www.DataSheet4U.com
Unclamped Inductive Switching Test Circuit & Waveforms
FDP3205 Rev. A
5 www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FDP3205.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDP3205 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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